Allicdata Part #: | FQPF19N10L-ND |
Manufacturer Part#: |
FQPF19N10L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 13.6A TO-220F |
More Detail: | N-Channel 100V 13.6A (Tc) 38W (Tc) Through Hole TO... |
DataSheet: | FQPF19N10L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 6.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF19N10L is a type of high-performance N-Channel Enhancement-Mode Field Effect Transistor (E-MOSFET) produced by Fairchild Semiconductor. This type of transistor is capable of providing both high switching performance and low on-resistance. This article will discuss the applications and working principles of the FQPF19N10L.
The FQPF19N10L can be used in a vast number of electronic equipment and circuits, from audio amplifiers and voltage regulator circuits to power amplifiers and various types of motor control circuits. The transistor is suitable for digital or linear application, and its high switching speed makes it suitable for high frequency operation. The low on-resistance of the device makes it suitable for high power related applications, as it reduces power losses.
The working principle of the FQPF19N10L is based on the basic structure and operating principle of a MOSFET. As with any MOSFET, the FQPF19N10L is composed of four basic elements: a source, a drain, a gate and a substrate. The source and drain are semiconductor materials, and the gate is a metallic layer that controls the flow of current through the channel. When a voltage is applied to the gate, it either opens (in the on state) or closes (in the off state) the channel by changing the width of the channel and the orientation of the charge carriers.
The FQPF19N10L is capable of providing very low gate charge, fast switching speed and very low input capacitance. This, combined with its low on-resistance and high current capacity, make it ideal for a wide range of applications. The pin-out of the device is also very standard, making it easy to integrate into existing designs.
The FQPF19N10L is an excellent choice for a wide range of applications due to its low on-resistance, fast switching speed and low input capacitance. It is suitable for digital and linear applications, and is capable of managing high power levels while reducing power losses. Finally, its standard pin-out makes it easy to integrate into existing designs.
The specific data is subject to PDF, and the above content is for reference
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