FQPF1N60T

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	21W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	11.5 Ohm @ 450mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	900mA (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQPF1N60T Application Field and Working Principle

The FQPF1N60T, a high-voltage, high-speed, N-Channel, Power MOSFET, is widely used in several automotive and consumer electronic applications. It is also frequently used in lighting and power control, AC/DC pulse circuits, and other high-voltage switching applications. There is a broad range of applications that can be satisfied by the robust features of this silicon integrated circuit Field Effect Transistor (FET).

Working Principle

A Field Effect Transistor (FET) is a three-terminal semiconductor device in which the electric field in a PN junction of two terminal can be used to control electric current between two other terminals, acting as a switch. A FET is composed of either an n-type or a p-type semiconductor material. The FQPF1N60T is an n-channel power MOSFET. The n-type channel creates a depletion region around the body of the FET which creates an insulated gate, between the gate and the source. When a voltage is applied to the gate, electron current is allowed to flow from the source to the drain.The FQPF1N60T has several key features that make it suitable for use in many areas. It has Gate-Source voltage ratings of +/- 20V, an Avalanche Energy Spec. of 195mJ, and a Drain current of 60A. The VDSS rating is 600V and the RDS (on) is 6mΩ. The maximum junction temperature is 175°C. The FQPF1N60T is capable of delivering high switching speed, low gate drive current and low on-state resistance.

Application Fields

This MOSFET is suitable for many applications including AC and DC motor control, HVAC control, lighting and power control, as well as high-voltage switching in industries such as automotive.One of the many applications of the FQPF1N60T is automotive motor control applications, where this FET can be used to control the speed of a motor. Since it is capable of handling high current, it is ideal for controlling the motor’s speed and is generally implemented in resistive and inductive loads, such as electric ovens, air conditioners, washing machines and electric cars.This FET is also find a wide range of use in lighting and power control. It can be used to control the brightness of LED lights and dimmers, as well as various other lighting products such as halogen lamps and fluorescent lights. Furthermore, it can be used for switching electricity for household appliances, or higher-amount currents for industrial appliances.In addition, the FQPF1N60T is used in the medical industry for devices such as ultrasound machines and X-ray machines. The FET’s ability to control high-voltage switching makes it suitable for these applications.The FQPF1N60T has been widely adopted in the automotive industry, due to its capacity for high currents and its robust features. It is commonly used in fuel injection systems, engine control systems, cruise control operation, and power steering systems. Furthermore, it is also used in airbags and windshield wipers, where the FET is used to control the power in the system.

Conclusion

The FQPF1N60T is a high-voltage, high-speed, N-Channel, Power MOSFET that can be used in many applications, such as automotive motor control, lighting control, and medical devices. Its Gate-Source voltage rating of +/- 20V, Avalanche Energy Spec. of 195mJ, maximum junction temperature of 175°C, and VDSS rating of 600V, make the FQPF1N60T suitable for many high-voltage switching applications.

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