Allicdata Part #: | FQPF28N15-ND |
Manufacturer Part#: |
FQPF28N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 16.7A TO-220F |
More Detail: | N-Channel 150V 16.7A (Tc) 60W (Tc) Through Hole TO... |
DataSheet: | FQPF28N15 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 8.35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.7A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF28N15 is a N-Channel Field Effect Transistor (FET) designed for power switching applications. This FET is built on a customized Gaseous Junction Field Effect Transistor (GJFET) technology process. This type of transistor is made up of a source, a drain and three electrical terminals, which are the gate, the source, and the drain.
The FQPF28N15 is a typical N-channel MOSFET which supports a peak blocking voltage of 28V. It has a drain current of at least 15A and a drain-source breakdown voltage (Vdss) of 28V. This FET can provide a maximum current rating of 15A with a low on-state resistance, providing better performance when switching currents.
The FQPF28N15 can be employed in circuits in which high power is being switched. The FQPF28N15’s wide power handling capabilities are well suited for applications such as voltage regulators, motor controls, and power converters. This FET is also often used in high-current, low-voltage power distribution systems. Some other possible applications of this FET include high-side and low-side switch applications, over-voltage protection circuits, and rectification.
This FET’s working principle is based on the flow of electrons between the drain and source. When a voltage is applied to the gate, the positive charge on the gate creates an electric field in the slice of silicon between the source and drain which forces electrons to flow from the source to the drain. The current that flows through the FET between the drain and source is determined by the size of the electric field and the amount of voltage that is applied to the gate. In this way, the FET works like a switch and can be used to control large currents.
Overall, the FQPF28N15 is a versatile N-type transistor that is suitable for a wide range of power switching applications. It is made up of three electrical terminals, the source, the drain, and the gate, and its working principle is based on the flow of electrons between the source and drain. The FQPF28N15’s wide power handling capabilities make it an ideal choice for a variety of power distribution systems and power switching applications.
The specific data is subject to PDF, and the above content is for reference
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