Allicdata Part #: | FQPF3N80-ND |
Manufacturer Part#: |
FQPF3N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 1.8A TO-220F |
More Detail: | N-Channel 800V 1.8A (Tc) 39W (Tc) Through Hole TO-... |
DataSheet: | FQPF3N80 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF3N80 is a small and inexpensive FET (Field Effect Transistor). It is a single N-channel MOSFET commonly used in switching applications, primarily because of its low on-resistance and high breakdown voltage, as well as its small size and low cost. This makes it a popular choice for filter signal control and high-power switching.
The FQPF3N80 is available in both through-hole and surface-mount packages, and can be used in both linear and switching applications. It is suitable for use in a wide range of applications, including audio, RF and power switching.
The FQPF3N80 is an N-type MOSFET, which means it is operated by the electric field effect, rather than the electric current. This makes it a very efficient and clean switch, as it does not require a significant amount of current to be switched. It also has low input capacitance, which helps improve its switching performance.
In order to make the best use of the FQPF3N80, it is important to understand how it works. It consists of two components, the p-type source and the n-type drain. Current flows into the source, and is then switched to the drain. As the voltage across the source and drain increases, the FET\'s resistance is reduced, allowing current to flow more easily. In this way, the FQPF3N80 acts as a switch.
The FQPF3N80 can be used in a wide variety of applications because of its many advantages. It is used in audio, RF and power switching applications, as well as filter signal control. Its low on-resistance and high breakdown voltage makes it an ideal choice for high-power switching, while its small size and low cost make it well-suited for use in linear applications.
The FQPF3N80 also has a variety of other benefits. Its low input capacitance helps to improve switching performance, while its relatively small size makes it easy to use in a variety of applications. Furthermore, its low power consumption and wide temperature range make the FQPF3N80 an attractive choice for many applications.
Overall, the FQPF3N80 is a cost effective and reliable switch, thanks to its low on-resistance and high breakdown voltage, as well as its small size and low power consumption. Its versatility and versatility makes it a suitable switch for a wide range of applications, from linear transfer to filter signal control and high-power switching.
The specific data is subject to PDF, and the above content is for reference
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