Allicdata Part #: | FQPF46N15-ND |
Manufacturer Part#: |
FQPF46N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 25.6A TO-220F |
More Detail: | N-Channel 150V 25.6A (Tc) 66W (Tc) Through Hole TO... |
DataSheet: | FQPF46N15 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 66W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3250pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 12.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25.6A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF46N15 is a N-channel MOSFET device manufactured by Fairchild Semiconductor. It is a high-performance logic level MOSFET, mainly used in applications that require high speed switching, such as switching power supplies, wireless communication systems and high frequency switching circuits. It is also used in low-side and high-side drive circuits.
The FQPF46N15 is a single N-channel MOSFET with a maximum drain-source voltage of 15V. It has a very low on-resistance of only 46 mΩ, making it an ideal choice for high frequency and high speed applications. The maximum on-state drain current is rated at 7A and the maximum gate-source voltage is rated at 10V. Additionally, the FQPF46N15 has a low gate-source capacitance of only 26pF.
The working principle of the FQPF46N15 is very simple; the gate–source voltage GA and DA controls the MOSFET\'s conductivity. When the voltage GA or DA is below the threshold voltage, the channel between the source and drain is turned off, and the flow of current is stopped. However, when the gate–source voltage rise above the threshold voltage(Vth), the channel between the source and drain is opened and current flows through the MOSFET. This can be used to control the flow of current in the circuit.
In addition, the FQPF46N15 is suitable for high-side and low-side switch applications. It has a drain-source diode across the MOSFET which protects the device from reverse voltage polarity stress and transient voltage spikes. It also has a thermal shutdown protection that prevents the device from overheating when the temperature of the MOSFET exceeds a certain limit.
The FQPF46N15 is widely used in power supplies, communication systems, and high frequency switching circuits. It is also used in buck converters, DC-DC converters, battery charging circuits and line-switching circuits due to its excellent performance characteristics. One of the main advantages of the FQPF46N15 is its very low on-resistance, which improves system efficiency and reduces power consumption.
Overall, the FQPF46N15 is an excellent choice for high precision, high frequency and high speed applications. It has a low on-resistance, low gate-source capacitance, low gate-source voltage, and a drain-source diode for protection. This makes it highly reliable and suitable for a range of complex applications.
The specific data is subject to PDF, and the above content is for reference
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