| Allicdata Part #: | FQPF4N20L-ND |
| Manufacturer Part#: |
FQPF4N20L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 3A TO-220F |
| More Detail: | N-Channel 200V 3A (Tc) 27W (Tc) Through Hole TO-22... |
| DataSheet: |  FQPF4N20L Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 27W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 5V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.35 Ohm @ 1.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQPF4N20L is a development, improvement and innovation of the MOSFET (metal-oxide-semiconductor field-effect transistor). This particular transistor device is manufactured by NXP Semiconductors and is classified as a single-N-Channel MOSFET. It is highly capable of delivering high current in a very compact package and is specifically designed for use in power management applications.
This device is particularly suitable for applications ranging from power management to high frequency switching applications requiring high current in low-voltage environments.
The FQPF4N20L has many advantageous features and capabilities, such as an integral body diode, temperature and voltage-dependent body diode turn-on voltages and current limitation to prevent device damage. In addition, the size of the device allows ease of integration into circuits due to its overall low area requirement. This is particularly beneficial in applications requiring power management in restricted real estate.
The FQPF4N20L has two distinct working principles, namely the forward conduction and reverse conduction. Forward conduction involves the application of a voltage to the gate of the device which results in higher current flow. In contrast, reverse conduction involves a decrease in the current as the voltage applied to the gate increases. This allows the device to be used in high frequency circuits since it can switch between the two states quickly.
The FQPF4N20L is an excellent choice for many applications and provides many benefits. It provides high current capability in a compact package and is designed to withstand high voltage environments. The device is particularly adapted for use in power management applications due to its low area requirements and temperature-dependent body diode turn-on voltage. In addition, its two distinct working principles of forward and reverse conduction make it ideal for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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