FQPF4N90

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The FQPF4N90 is a four-terminal, high-voltage, low-on-resistance, field-effect transistor (FET). It is typically used in transistors and related semiconductors, transistor amplifiers, and other power or voltage-regulating applications.

The FQPF4N90 is a high-performance device that uses a n-channel depletion-mode FET structure. It is specifically designed for use in linear or switching circuits such as high-voltage amplifiers, high-voltage rectifiers, low-on-resistance switching, and power regulation.

The FQPF4N90 has two main terminals. The source terminal is connected to the body of the device, and the drain terminal is connected to the surface of the device. The two remaining terminals are the gate and the body. The gate terminal controls the flow of current from the source to the drain. When a positive voltage is applied to the gate terminal, current will flow from the source to the drain, creating an on-state, and when a negative voltage is applied to the gate terminal, no current will flow, resulting in an off-state.

The FQPF4N90 also incorporates a parasitic diode between the source and drain electrodes. This diode is initially forward-biased when the gate voltage is zero, resulting in an increased on-resistance, and can provide protection in circuits that are prone to overvoltage. The high-voltage capability of the device also makes it suitable for use in applications where high-voltage isolation and power switching are required, such as in high-voltage power supplies or high voltage signal transmission.

In addition to the standard FQPF4N90 device, there are several variants that can provide better performance for specific applications. These include the FQPF4N90-S, which is optimized for low noise, low power and low leakage applications; the FQPF4N90-D, which is designed for fast switching applications; and the FQPF4N90-T, which is optimized for high voltage and high current applications.

The FQPF4N90 is a versatile and reliable device that is widely used in a variety of applications. As a high-performance power transistor, it is capable of providing high switching speed, low on-resistance and high-voltage capability. It is an ideal choice for use in high-voltage applications and power regulation.

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