Allicdata Part #: | FQPF50N06L-ND |
Manufacturer Part#: |
FQPF50N06L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 32.6A TO-220F |
More Detail: | N-Channel 60V 32.6A (Tc) 47W (Tc) Through Hole TO-... |
DataSheet: | FQPF50N06L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1630pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 16.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 32.6A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF50N06L belongs to the family of field-effect transistors (FETs) and is a n-channel enhancement-mode type. The datasheet for this transistor can be found on the Internet and the information presented in it is invaluable to those wishing to use this device. This article will discuss the application field and working principle of the FQPF50N06L, as well as its various characteristics.
The application field of the FQPF50N06L can be found in a number of different circuits such as audio power amplifiers, power switching, active current controls, and battery chargers. It can operate at a maximum of 50 volts and can handle a maximum current of 6 amps, making it an ideal choice for many applications. Aside from this, this transistor can also be used to build nice, compact, and highly efficient circuits.
The working principle of the FQPF50N06L is relatively simple. Basically, the gate of the transistor acts as an electrical connection between the source and the drain, which allows current to flow through the transistor when a certain voltage is applied to it. The amount of current that is allowed to flow through the transistor is determined by the voltage that is applied to the gate, making it necessary to use the appropriate voltage in order for the transistor to function correctly.
The FQPF50N06L has a number of characteristics which make it attractive to those who wish to use it. One of the most important ones is its low gate capacitance, which allows for high switching speeds. This, in turn, means that the FQPF50N06L can be used to create circuits which require fast switching. It also has a high breakdown voltage, which is necessary for powering higher-current applications. It has a good temperature range as well, which allows it to function well in a variety of environments.
When looking at the FQPF50N06L it is important to remember that it is an enhancement-mode type of transistor and that it must be used appropriately in order to obtain the desired performance. As a general rule, the gate voltage applied to the FQPF50N06L should not exceed the maximum specified on the datasheet. One must also take into account the drain to source voltage as too much of this can cause permanent damage to the device.
In conclusion, the FQPF50N06L is an excellent choice for a variety of applications. It is important to remember its working principle and characteristics when using this type of device and to apply the maximum specified voltage to the gate in order to obtain the desired performance. Additionally, the FQPF50N06L can be used to build compact and efficient circuits, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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