Allicdata Part #: | FQPF5N60-ND |
Manufacturer Part#: |
FQPF5N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 2.8A TO-220F |
More Detail: | N-Channel 600V 2.8A (Tc) 40W (Tc) Through Hole TO-... |
DataSheet: | FQPF5N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 730pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQPF5N60 is a type of enhancement-mode field-effect transistor (FET) that belongs to the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This transistor combines a silicon substrate with a metal oxide gate to create an effective transistor operating in the MOSFET enhancement-mode. FQPF5N60 transistors are designed for use in a variety of applications, ranging from analog and digital circuits, to complex switching circuits. FQPF5N60 transistors are also suitable for use in power management circuits.
The FQPF5N60 has a P-channel enhancement-mode, meaning it is a normally-off device with an off-state working voltage of -25V. The FQPF5N60 has a RDS(on) value of 5mΩ and a drain current of -3.2A. The off-resistance of the transistor is also rated at < 5.8mΩ. The FQPF5N60 is available in an incredibly small package of 5mm x 7mm, making it well-suited for applications where space is at a premium. This small package also helps to reduce the amount of power it consumes and helps to improve thermal dissipation, resulting in improved overall performance.
Since the FQPF5N60 is a single MOSFET transistor, it relies on an independent gate voltage to turn it on and off. When a positive gate voltage is applied, the field effect of the transistor is activated and the N-channel opens up. This allows current to flow from the drain to the source and the transistor is switched on. When the gate voltage is removed, the N-channel closes and the current is stopped, turning the transistor off. Due to the P-channel enhancement-mode, the transistor is normally-off, so it requires a positive gate voltage to turn it on.
Because the FQPF5N60 is a single MOSFET transistor, it is well-suited for a variety of applications, such as analog and digital circuits, power management circuits, and complex switching circuits. Additionally, the small size and low power consumption makes it an ideal choice for applications requiring a small form factor. The FQPF5N60 is also ideal for use in automotive applications as it is designed to meet AEC-Q101 requirements for automotive integrated circuits.
In summary, the FQPF5N60 is a high-performance single MOSFET transistor that is ideal for use in a variety of applications. The small size and low power consumption make it perfect for applications that require a small form factor, while the P-channel enhancement-mode ensures it is a normally-off device. The FQPF5N60 is also well-suited for automotive applications, as it is designed to meet AEC-Q101 requirements for automotive integrated circuits. All of these factors make the FQPF5N60 a great choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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