FQPF6N25

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FQPF6N25 belongs to a family of single FET (field effect transistor) devices. It is a power switching device which has a low on-state resistance, allowing for high current flow. This FET device is suitable for medium to high power applications, providing high breakdown voltage, high power dissipation, and excellent immunity to voltage transients.

The FQPF6N25 is an overmolded, dual isolated N-channel power MOSFET. It has been designed to combine the benefits of low on-state resistance and high interruption capability. The device is designed to provide reliable switching performance in a wide range of applications.

The FQPF6N25 has a maximum voltage rating of 30V, and is usually used as a switch in a circuit. It has a maximum Drain-Source voltage (VDS), maximum drain current (ID), and maximum power dissipation (Pd) rating. The maximum drain-source On-state resistance (RDSon) is between 25 and 28 milli ohm. The maximum junction temperature (Tj) is 175°C.

FQPF6N25 has two supply pins (source and gate), and one output pin (drain). When source and gate pins are supplied with the same voltage, the device is in the switching mode. When the gate is supplied with a higher voltage with respect to source, the device is in the on-mode. A lower voltage with respect to the source will cause the device to be in the off-mode. The drain current is controlled by the voltage applied to the gate-source. The device has a positive temperature coefficient, which means that the drain current increases when the junction temperature increases.

In high power applications, FQPF6N25 is able to provide a low on-state resistance, allowing for higher currents to be switched. It offers a low operating current at a given voltage, allowing for high power dissipation and low junction temperature. The on-state resistance is kept at a low level to reduce switching losses and maintain low power losses. The FQPF6N25 also provides a high breakdown voltage, and is able to operate under transient conditions.

FQPF6N25 can be used in a wide range of applications, such as switching in application circuits, lighting, logic control, motor control and power supplies. It can also be used in variable frequency drives, and in high frequency switching applications. The FQPF6N25 is suitable for a variety of packaging options, including wire bonding and surface mount options.

In conclusion, FQPF6N25 is a single N-channel MOSFET device designed to provide reliable switching performance in medium to high power applications. It has a low on-state resistance, high breakdown voltage, and high power dissipation. It can be used in a wide range of applications, including logic control, motor control, and power supplies. The FQPF6N25 is available in a variety of packaging options.

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