Allicdata Part #: | FQPF6N90-ND |
Manufacturer Part#: |
FQPF6N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 3.4A TO-220F |
More Detail: | N-Channel 900V 3.4A (Tc) 56W (Tc) Through Hole TO-... |
DataSheet: | FQPF6N90 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1880pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF6N90 Field-effect transistor (FET) is a type of MOSFET (metal-oxide-semiconductor field-effect transistor). It combines powerful performance characteristics with a wide variety of options for applications. The FQPF6N90 is a single-channel FET offering both supporting and linear operation. Featuring low on-resistance and low RDI, the FQPF6N90 can be used in a variety of applications, such as DC-DC converters, motor control circuits and in high-frequency switching operations.
The FQPF6N90 families of FET types are available in a variety of packages. For the best performance, the device is available in the TO-220 package with a maximum rating of 75V and current rating of 40 A. The device is also available in the SOT223 package, with a maximum rating of 25V and current rating of 15 A. The maximum operating temperature of the FQPF6N90 is 175°C.
The FQPF6N90 is designed to operate in a wide variety of applications. As a switching transistor, its on-resistance and RDI characteristics make it suitable for high frequency applications, such as DC-DC converters. Its linear features enable it to be used in low voltage, low power linear circuits, such as motor control circuits. The FQPF6N90 is also suitable for automotive and industrial applications, with its high temperature operating. range of 175°C.
The FQPF6N90’s working principle is based on a capacitor-less Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The FQPF6N90 consists of a substrate, gate, drain and source terminals. The gate and drain are connected through a n-channel Metal Oxide Semiconductor (MOS) gate dielectric. When a voltage is applied on the gate, a corresponding current begins to flow from source to drain. This is known as the conduction channel, which is modulated by the gate voltage. This is why MOSFETs are widely used in switching and linear applications, as the conduction channel can be manipulated with the gate voltage.
The FQPF6N90 is also one of the more popular field-effect transistors due to the advanced features it provides. It supports low RDI and low on-resistance, making it suitable for a variety of applications, including DC-DC converters and high-frequency switching operation. Its linear characteristics enable it to be used in low voltage, low power linear circuits, such as motor control circuits. Finally, the FQPF6N90 has a maximum operating temperature of 175°C, making it suitable for automotive and industrial applications. Together, all these features make the FQPF6N90 an incredibly powerful field-effect transistor.
The specific data is subject to PDF, and the above content is for reference
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