FQPF8N60CYDTU Allicdata Electronics
Allicdata Part #:

FQPF8N60CYDTU-ND

Manufacturer Part#:

FQPF8N60CYDTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 7.5A TO-220F
More Detail: N-Channel 600V 7.5A (Tc) 48W (Tc) Through Hole TO-...
DataSheet: FQPF8N60CYDTU datasheetFQPF8N60CYDTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Formed Leads
Supplier Device Package: TO-220F-3 (Y-Forming)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQPF8N60CYDTU is an N-channel MOSFET. A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a type of Field Effect Transistor (FET). It is a type of transistor that operates by creating an electric field between its gate and its drain. The FQPF8N60CYDTU utilizes N-channel semiconductor technology. It has an ultra-low input capacitance and is designed to operate at very low current levels. It is a single-package FET, meaning that it consists of one physical package, rather than multiple components.

The FQPF8N60CYDTU is used in various applications and is considered an important component in the electronics industry. Its primary purpose is to act as a switch or amplifier, converting electronic signals into desired outputs. It is capable of switching high-voltage and high-current levels with high reliability. Additionally, it is used in high-efficiency power conversion circuits and automotive applications, as well as in high-speed switching circuits.

The FQPF8N60CYDTU is well suited for switching high-current and high-voltage levels, making it an ideal choice for applications such as motor control, drive circuits, and motor-driver applications. Additionally, it is suitable for use in circuits that require fast response times and high isolation. It is also used in dc-dc converters and ac/dc power supplies.

The FQPF8N60CYDTU works on the principle of the depletion-mode field effect transistor (DMFET). In a DMFET, the gate of the MOSFET is connected to the source and the drain is connected to the body of the device. When a positive voltage is applied to the gate, it attracts negative charge carriers and the source-drain current is increased. Similarly, a negative voltage on the gate repels positive charge carriers and reduces the current. Therefore, the magnitude of the current depends on the gate voltage, making it an effective switch.

The FQPF8N60CYDTU is designed to operate in low-frequency and low-temperature applications. It is available in a wide range of packages, allowing for easy integration into existing designs. It offers excellent on-state and drain-source resistance characteristics for low conduction losses, and its maximum rated drain current is high enough to provide ample headroom for most applications.

The FQPF8N60CYDTU is a versatile MOSFET suitable for a wide range of applications where high-current and high-voltage levels need to be switched with high reliability. It offers ultra-low input capacitance and is designed to operate efficiently at very low current levels. Its DMFET principle of operation ensures accurate and reliable switching, making it an ideal choice for power conversion circuits, automotive applications, and high-speed switching circuits.

The specific data is subject to PDF, and the above content is for reference

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