Allicdata Part #: | FQPF9N50YDTU-ND |
Manufacturer Part#: |
FQPF9N50YDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5.3A TO-220F |
More Detail: | N-Channel 500V 5.3A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | FQPF9N50YDTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
Supplier Device Package: | TO-220F-3 (Y-Forming) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 730 mOhm @ 2.65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF9N50YDTU is a Toshiba-manufactured high-speed power MOSFET, comprised of a single, N-channel MOSFET. As such, it is primarily used in a wide range of applications that require regulated current flow, like high voltage switching networks, DC-to-DC converters, and rectifiers. Additionally, it comes in an industry-standard flat-pack style, making it easy to install and more versatile than similarly-rated components. It is rated to carry a maximum voltage of 9 V and a maximum current of 17 A at 100°C ambient.
The FQPF9N50YDTU comprises several key components that enable its function. The integrated MOSFET has a source pin and drain pin, which provide the electricity output when the unit is operating. The gate pin controls the flow of electricity from source to drain directly and is controlled by a voltage between 0 and 9 V. The body diode provides a back biased situation that allows conduction in an opposite direction from source to drain. Finally, the on-resistance of the MOSFET allows for lowered RDS(on) values, reducing power loss and improving thermal performance.
The FQPF9N50YDTU can be used in a variety of settings; however, its primary application is in high-power and high-voltage switching networks. When the gate pin is given a trigger voltage of between 0 and 9 V, the MOSFET begins to conduct a current through the source to drain, depending on the voltage and current ratings of the device. This provides a way to precisely regulate current flow, allowing for efficient and accurate power delivery in DC-to-DC converters and rectifiers. Additionally, its compact size allows it to be mounted on PC boards where space is at a premium.
The FQPF9N50YDTU is also suitable for use in all types of high-speed switching applications. With its fast-switching performance, it can switch in under one microsecond with no power dissipation considerations. Additionally, its hermetically sealed package provides a level of protection that ensures it can endure challenging environmental conditions. This makes it an ideal choice for use in automotive and military applications, where extreme temperatures and vibration are present.
The FQPF9N50YDTU is an excellent choice for a variety of applications due to its combination of features. It has a low RDS(on) value that reduces power loss and improves thermal performance, and its fast-switching performance makes it suitable for high-speed applications. Additionally, its hermetically sealed package provides an extra level of protection for harsh operating environments. Finally, its compact size makes it suitable for applications where space is a premium, such as PC boards.
The specific data is subject to PDF, and the above content is for reference
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