Allicdata Part #: | GP1M003A050CG-ND |
Manufacturer Part#: |
GP1M003A050CG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 2.5A DPAK |
More Detail: | N-Channel 500V 2.5A (Tc) 52W (Tc) Surface Mount D-... |
DataSheet: | GP1M003A050CG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 395pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP1M003A050CG is a type of FET (Field Effect Transistor) that is widely available. The GP1M003A050CG is a single N-channel MOSFET (Metal-Oxide-Semiconductor FET) that can be used in various applications. It is useful in the area of analog and digital signal processing and power management, as it can provide either a high or a low value. In order for the FET to work, a gate voltage needs to be provided which enables the flow of charge carriers.
The operating temperature range of the GP1M003A050CG is from -55°C to +150°C, which makes it a highly versatile device in terms of temperature resistance. The FET also has a high input capacitance which makes it ideal for low-noise, high-speed applications as it can increase the overall efficiency of the device. The device also has a low drain-source on-resistance, making it an efficient device to use when power is to be conserved.
The main application field of the GP1M003A050CG is in the area of controlling and switching the voltage that is supplied to the circuits. It can control and switch the electric signals, as well as provide a protection layer against the surges of power that could potentially damage the circuitry. This makes it ideal for use in automotive, telecom, and industrial applications where protection is required.
The working principle of the GP1M003A050CG is very simple. When a voltage is applied to the gate of the device, this enables the flow of electric current from the source to the drain. The impedance of the device increases when the gate voltage increases, which reduces the drain-source conduction. When the gate voltage is reduced, the conduction increases again, allowing more current to flow. As such, the GP1M003A050CG can be used to control the flow of electric current.
The GP1M003A050CG is also advantageous because it has low noise levels, making it suitable for use in noise-sensitive applications. It has a fast switching speed, making it suitable for high-speed applications as well. The device also offers excellent thermal stability, making it great for use in environments where temperature extremes need to be monitored.
To summarize, the GP1M003A050CG is a single N-channel MOSFET that offers both high and low values. It is useful in analog and digital signal processing and power management, as it can provide either a high or a low value. Its main application field is in the area of controlling and switching voltage that is supplied to the circuits. Its operating temperature range is from -55°C to +150°C, making it highly versatile in terms of temperature resistance. It is also advantageous because it has low noise levels, fast switching speed and excellent thermal stability.
The specific data is subject to PDF, and the above content is for reference
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