GP1M006A065PH

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	120W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1177pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.6 Ohm @ 2.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M006A065PH is a type of field effect transistor (FET) specifically designed for low noise, high-speed switching applications. The FET is an insulated gate device which is a general term for both field effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). This particular model has a p-channel junction, which is the most common type used in low noise and high-speed switching applications.The FET works by having an insulated gate which controls the flow of electrons through it. The gate has several positives and negatives attached to it, and when the positive is greater than the negative, electrons are allowed to flow through the FET. The FET also has a gate-source voltage, which controls the voltage needed for the gate to turn on and off. The gate-source voltage needs to be high enough to allow electrons to flow and low enough to prevent them from flowing, thus creating a high-speed switching action.The GP1M006A065PH is an ideal choice for high-speed switching applications because it has a low on-resistance (RDS), and a low on-state gate-source voltage (VGS). The low on-resistance of this FET means it can handle higher currents more efficiently, which results in better power dissipation. The low on-state gate-source voltage means that it can be easily turned on and off, thus making it more suitable for applications which require high switching speeds.The GP1M006A065PH is well-suited for applications in the automotive, industrial, medical, communication, and entertainment industries. It is often used in power supplies, motor control circuits, automated machines, automotive applications, and consumer electronics. Additionally, it can be used in any application where low noise, high-speed switching is required.In conclusion, the GP1M006A065PH is a very versatile and practical type of p-channel FET which is commonly used in low noise, high-speed switching applications. It has a low on-resistance, low on-state gate-source voltage, and can handle higher currents more efficiently, making it the ideal choice for many applications in the automotive, industrial, medical, communication, and entertainment industries. Furthermore, its versatility and practicality means that it can be used for virtually any application where low noise, high-speed switching is required.

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