GP1M010A080N

GP1M010A080N application field and working principle

GP1M010A080N is a reflective type MOSFET whose structure consists of a semiconductor substrate, a gate electrode and a semiconductor substrate, with a gate insulating film and a drain electrode formed on the surface of the semiconductor substrate. This type of MOS FET mainly consists of a triple MOS structure, which includes a p-type substrate, a source electrode and a drain electrode. It is mainly used in areas such as power devices, power supply systems, semiconductor devices and mobile phones.

Working principle

GP1M010A080N MOS FET mainly uses the electrostatic effect of high-voltage gate to induce its conductive channel, forming the working state of field effect transistor. Its working principle is that when high voltage is applied to the gate of the transistor, the gate electrode will be attracted by the semiconductor substrate and form an electrostatic attraction between the gate and the semiconductor substrate. The attraction between the gate and the drain will have an effect on the conductivity of the substrate, increasing the conductivity of the substrate and also increasing the conductive channel.

At the same time, the gate-drain voltage will also have an effect on the shape of the conductive channel, so that the electric current along the channel can be changed. For the GP1M010A080N, when the gate voltage is increased, the field effect transistor\'ll get stronger and stronger, that is, the drain will be stronger than the gate, leading to the channel conductivity increases.

Application field

GP1M010A080N MOSFET mainly used as a major component in power devices and power supply systems. For example, in power controllers, it can control the speed of motor control and the stability of load, and also control the speed of heat transfer, the temperature of equipment, power conversion, and the switching of signal. It is used in many electronic products such as mobile phones, desktop computers, laptop computers, LED lighting and so on. Moreover, GP1M010A080N MOSFET also can be used in the system of controlling semi-conductor heating so that to adjust the temperature of semi-conductor device.