Allicdata Part #: | GP1M003A050PG-ND |
Manufacturer Part#: |
GP1M003A050PG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 2.5A IPAK |
More Detail: | N-Channel 500V 2.5A (Tc) 52W (Tc) Through Hole I-P... |
DataSheet: | GP1M003A050PG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 395pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Field Effect Transistors, or FETs for short, are an important type of transistor in the semiconductor industry. GP1M003A050PG is one type of FET which is specifically designed as a low-power and low-current device.
FETs serve as both amplifiers and switches in many electronic applications. By controlling the voltage applied across its gate, the device creates a channel between two electrodes that can either increase or decrease the flow of electrons through the transistor. This makes an FET ideal for regulating AC or DC power supplies and controlling the timing and intensity of various signals within a circuit.
The GP1M003A050PG is a voltage-controlled FET with an integrated resistor. This resistor helps limit the amount of current that passes through the device and also acts as a current limiter in the event of a fault. In addition, the FET also has a relatively high input impedance and a low on-state resistance, making it suitable for use in circuits with high input voltages or currents.
The key feature of the GP1M003A050PG is its low power consumption. This is achieved through the use of a special flicker-free circuitry, which increases the efficiency of the device and reduces the amount of heat generated during operation. The device also has a wide operating temperature range of -40°C to 85°C, which makes it suitable for use in a variety of environmental conditions.
In terms of performance, the GP1M003A050PG offers a wide range of features. It has a forward voltage of 30V and a reverse voltage of -10V. It also has a breakdown voltage of 150V and a maximum current rating of 100mA. The device is capable of handling a signal input range of 0.2V to 12V and can output signal ranges up to 12V with a maximum output current of 10mA.
The GP1M003A050PG works by using a MOSFET to control the current through the gate of the device. A MOSFET is a semiconductor device comprised of a gate, a source, and a drain. When a voltage is applied to the gate, it creates an electric field that attracts electrons from the source to the drain, allowing current to flow. The strength of the electric field is determined by the voltage applied to the gate, allowing users to control the current flowing through the device.
The GP1M003A050PG is an ideal choice for a wide range of low-power and low-current applications. Its low operating temperature, wide voltage ranges, and integrated current limiting features make it suitable for use in a variety of situations, from battery-powered devices to linear power supplies. It is also relatively easy to handle and install, making it an ideal choice for DIY projects and custom builds.
The specific data is subject to PDF, and the above content is for reference
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