Allicdata Part #: | GP1M008A025FG-ND |
Manufacturer Part#: |
GP1M008A025FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 250V 8A TO220F |
More Detail: | N-Channel 250V 8A (Tc) 17.3W (Tc) Through Hole TO-... |
DataSheet: | GP1M008A025FG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 17.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 423pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The GP1M008A025FG is a single N-channel enhancement mode MOSFET with excellent thermal properties, small size, and superb electrical characteristics. It is designed for protecting voltage up to 25 volts applications such as switching circuits, battery protection and electronic sensing. This fast switching and low-on-resistance FET has small electrical resistance and low capacitance, making it an ideal choice for high-speed power applications. It is also suitable for high temperature, high reliability and long life requirements.
This device is used in applications where high power fidelity and high power efficiency is required. The GP1M008A025FG can be used in power switching systems, computer peripherals and consumer applications. It has a low drain-source resistance and has a low gate charge, allowing for high current handling capability. The on-resistance and drive voltage is also very low, allowing for maximum power efficiency.
The GP1M008A025FG features an on-resistance rating of 0.5Ω, a gate-source voltage of 1.5V and a drain-source voltage of 25V. The gate-source capacitance rating is 15pF, and the drain-source capacitance rating is 100pF. The device has a total gate charge of 4.2nC and a total gate charge resistance of 350Ω. It also has a threshold voltage of 0.5V and an RDS (on) of 0.5 Ω.
Understanding how the GP1M008A025FG works is relatively simple. Like other MOSFETs, it is made up of four terminal connections- drain, source, gate, and body. The gate is biased in the negative direction, and this determines its on-state resistance. When the voltage between the gate and the source is decreased, reducing the negative bias, the anode-source junction is forward biased, and electrons are then only allowed to flow into the channel, leading to a high current. This process is monitored through the source connection.
When the source-gate voltage is increased, electrons can no longer flow freely into the channel, leading to a low current. When this happens, the device is said to be in its off-state. In this state, the resistance is extremely high, limiting the current flow and preventing any harm to the device.
In the on-state, the GP1M008A025FG draws very little current, which allows for power efficiency. As well, the devices small size and high power fidelity makes it an ideal choice for high power applications. It also has a very low gate-source capacitance, allowing for high frequency applications. The device also has excellent thermal properties, allowing for greater stability without the need for extra cooling.
In summary, the GP1M008A025FG is an ideal choice for high power, switching applications due to its fast switching, low on-resistance, low capacitance and low drain-source resistance. It is suitable for high temperature, high reliability and long life requirements. Understanding how the device works is relatively simple, with four terminal connections that facilitate the on-off state. The device also has excellent thermal properties and a small size making it an ideal choice for high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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