GP1M009A020HG

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	414pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	8.6nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	400 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M009A020HG Application Field and Working Principle

GP1M009A020HG is a part of transistors, which are widely used in a range of electronic circuits. They are widely used in digital systems, such as in microcontrollers, computers, and other digital logic circuits. GP1M009A020HG is a type of field-effect transistor (FET), specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). It is known as one of the most efficient and popular transistor solutions, used in a range of computer, consumer-electronics and other electronic circuits.GP1M009A020HG transistors are typically used in high-power amplifiers and power switches, as well as in low noise analog circuits. Due to their high efficiency and low switching power, these transistors are often preferred over other solutions. As such, they are used in a range of applications, such as in power supplies, DC-DC Converters, and audio amplifiers.In order to understand the working principle of the GP1M009A020HG, it is important to understand how transistors work. Transistors are electronic devices that are designed to control the flow of electricity. They work by using the principle of negative opposition - a current is generated by applying a voltage across two different terminals. This results in a resistance that can be used to control the flow of electricity, allowing for digital or analog circuits to be implemented.When it comes to the GP1M009A020HG, it is a specific type of FET that is used in many different applications. This type of FET is specifically known as an insulated-gate field-effect transistor, or IGFET. It works similarly to other transistors, using the principle of negative opposition in order to control the flow of current. In comparison to other types of transistors, however, FETs are especially efficient in controlling the voltage and current levels.In order to understand how the GP1M009A020HG works, it is important to examine the features of the MOSFET itself. The main features of this type of transistor include a source, gate, and drain. The source and gate are both terminals of the transistor, while the drain is the output of the transistor. When a voltage is applied across the source and gate, it creates an electric field that affects the behavior of electrons in the transistor. As a result, this allows for the flow of current to be controlled, allowing for the implementation of digital circuits.Furthermore, in order to control the flow of current, the GP1M009A020HG also includes a gate-oxide layer and a channel-semiconductor layer. The gate-oxide layer acts as an insulator and prevents the voltage from leaking out. Meanwhile, the channel-semiconductor layer helps to control the flow of current. As the voltage across the source and gate is increased, the current flow can be increased or decreased as needed. In addition, the MOSFET also includes a body-diode that helps to protect the FET from reverse-polarity inputs.Overall, the GP1M009A020HG is a powerful and efficient type of transistor, which is often used in a range of high-power and low-noise circuits. It works by using the principle of negative opposition, in order to control the flow of current. It also includes various features, such as a gate-oxide layer and a body-diode, which help to ensure its performance. As such, they are widely used in a range of applications, including motor control, power supplies and DC-DC converters.

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