Allicdata Part #: | GP1M011A050FSH-ND |
Manufacturer Part#: |
GP1M011A050FSH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 10A TO220F |
More Detail: | N-Channel 500V 10A (Tc) 51.4W (Tc) Through Hole TO... |
DataSheet: | GP1M011A050FSH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 51.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1546pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
GP1M011A050FSH is a device which can be classified as Single MOSFET (metal-oxide-semiconductor field-effect transistor) in the transistors family. This device is commonly available in a array of package types, such as TO-241AA, which suits a broad range of applications. It is mainly used for applications that requirehigh power switching and linear amplification.
To understand the GP1M011A050FSH device\'s working principle, one has to understand the general principle of MOSFET operation. A MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a transistor-like semiconductor device, composed of two or more semiconductor layers, namely source and drain, separated by a thin layer of silicon dioxide (SiO2), which acts as a dielectric between them. When a voltage is applied to the gate, a thin inversion layer is formed in the SiO2, which connects the source and drain, thus allowing carriers to flow freely between them. Since the field effect (inversion layer) is modulated by the gate voltage, the device has excellent control over the current flow and is suitable for high power applications.
The GP1M011A050FSH features a positive temperature coefficient, a low on-resistance, and a low-resistance package, making it an ideal choice for use as an on/off switch in medium-power applications. Additionally, its ability to withstand high current is well suited for power switch applications with currents of up to 25 Amps. Furthermore, the device provides excellent load and line regulation with low capacitance, making it suitable for power conversion applications.
The GP1M011A050FSH also has a broad range of applications where linear amplification is required. This MOSFET is particularly suited to audio applications due to its low distortion level and high linearity. Additionally, its multiple gate-source voltage ratings, ranging from +20V to -20V, makes it suitable for use in a variety of different circuits. Moreover, it can also be used in high current switching applications, such as motor and servo control.
In summary, the GP1M011A050FSH is a MOSFET with a low-resistance package, a low on-resistance, and a positive temperature coefficient. Its ability to handle high power applications and its high linearity make it an ideal choice for high current switching and linear amplification applications. The device\'s multiple gate-source voltage ratings make it suitable for use in a wide range of applications, and its excellent load and line regulation ensure a consistent performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GP1M003A040CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 400V 2A DPAKN... |
GP1M003A040PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 400V 2A IPAKN... |
GP1M003A050CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A DPA... |
GP1M003A050HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A TO2... |
GP1M003A050PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A IPA... |
GP1M003A080H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 800V 3A TO220... |
GP1M003A080PH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 800V 3A IPAKN... |
GP1M004A090FH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 4A TO220... |
GP1M004A090H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 4A TO220... |
GP1M005A040CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 400V 3.4A DPA... |
GP1M005A040PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 400V 3.4A IPA... |
GP1M005A050CH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A DPA... |
GP1M005A050FH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A TO2... |
GP1M005A050H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A TO2... |
GP1M005A050PH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A IPA... |
GP1M006A065CH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 5.5A DPA... |
GP1M006A065F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 5.5A TO2... |
GP1M006A065PH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 5.5A IPA... |
GP1M006A070F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 700V 5A TO220... |
GP1M008A025CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 250V 8A DPAKN... |
GP1M008A025FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 250V 8A TO220... |
GP1M008A025HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 250V 8A TO220... |
GP1M008A050PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 8A IPAKN... |
GP1M008A080FH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 800V 8A TO220... |
GP1M009A020CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A DPAKN... |
GP1M009A020HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A TO220... |
GP1M009A020PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A IPAKN... |
GP1M009A050FSH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 8.5A TO2... |
GP1M009A050HS | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 8.5A TO2... |
GP1M009A060FH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 9A TO220... |
GP1M009A070F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 700V 9A TO220... |
GP1M009A090H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 9A TO220... |
GP1M010A060FH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 10A TO22... |
GP1M010A080N | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO3P... |
GP1M011A050FSH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 10A TO22... |
GP1M011A050HS | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 10A TO22... |
GP1M012A060FH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 12A TO22... |
GP1M013A050FH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 13A TO22... |
GP1M015A050H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 14A TO22... |
GP1M016A025PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 250V 16A IPAK... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...