GP1M006A065CH

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	120W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1177pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.6 Ohm @ 2.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

GP1M006A065CH Application Field and Working Principle

GP1M006A065CH is a type of Small Signal Enhancement Mode Field Effect Transistor (MOSFET), which integrates high-performance N-channel MOSFETs. It offers high switching performance, low gate charge and low ON state resistance. This General Purpose MOSFET is ideally suited for load switching and power management applications.

General Features of GP1M006A065CH

GP1M006A065CH features an Advanced Gate Oxide technology which provides lower input capacitance and higher gate threshold voltage. It also features an Enhance mode MOSFET which has an extremely low threshold voltage to enable fast switching. The device also offers high speed switching and improved ESD protection. The device also offers very low gate charge and on state resistance, which allows it to operate at high efficiencies.

Applications of GP1M006A065CH

GP1M006A065CH is suitable for a variety of applications, especially for high power switching applications. It can be used for load switching and power management in automotive, office automation, communication and industrial applications. It is also suitable for high frequency switching applications, including DC-DC converters, Synchronous Rectifier, Motor Control and high speed logic level shift.

Working Principle of GP1M006A065CH

GP1M006A065CH is a Enhancement Mode MOSFET (eMOSFET). In an eMOSFET, the gate voltage is applied to an isolated gate region which is separated by a dielectric layer from the substrate. This isolation allow the gate voltage to control the current between the drain and source.When a positive voltage is applied to the gate, it creates an electric field across the dielectric layer, which creates a current between the drain and source terminals. This current can be used to control a wide variety of applications, such as load switching and power management in automotive, office automation, communication and industrial applications.The eMOSFET also offers high speed switching, improved ESD protection and very low gate charge. The low gate charge allows the device to work at higher efficiencies and is ideal for high frequency switching applications.

Conclusion

GP1M006A065CH is an eMOSFET which offers high performance, high speed switching, low gate charge and improved ESD protection. It is particularly useful for high power switching applications and for high frequency switching applications. The device is ideal for applications such as load switching and power management in automotive, office automation, communication and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description