GP1M005A050H

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	92.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	627pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.65 Ohm @ 2.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GP1M005A050H, a type junction field-effect transistor (JFET), is a three-terminal semiconductor device with three active pins (gate, source, and drain). It is one of the most commonly used type of Field Effect Transistors (FETs). The GP1M005A050H JFET is an N-channel FET.The GP1M005A050H is composed of three layers of semiconductor material, namely the base, the source, and the drain. The source and the drain are made from N-type semiconductor material, while the base is composed of P-type material. The GP1M005A050H is also equipped with a gate which is connected to the source. The gate is responsible for controlling the current flow from the source to the drain.The GP1M005A050H works when a voltage is applied between the gate and the source of the transistor. This voltage creates an electric field in the base of the transistor, which reduces the resistance between the source and the drain. The current then flows from the source to the drain through this channel.The advantage of the GP1M005A050H is that it has a very low input impedance and high output impedance. This makes the GP1M005A050H suitable for applications such as input and output stages of operational amplifiers, voltage controlled oscillators (VCOs), switched mode power supplies (SMPSs), and digital-to-analog converters (D/A converters). It is also used in applications such as gain control of amplifiers, multiplexer and demultiplexer circuits, waveform generators, and in the design of high frequency and low frequency analog circuits. The GP1M005A050H can be operated at various frequencies depending on the application. Some of the typical frequency ranges are from 0.05 to 20 MHz for high frequency applications, and from 0.1 to 10 MHz for low frequency applications. The frequency range of the GP1M005A050H can also be extended by using an impedance matching network.The GP1M005A050H is also very reliable and has a long life span. It is constructed with a high quality N-type semiconductor material, which is resistant to thermal stress, moisture, and radiation. It is also designed to withstand overvoltage and is able to dissipate power. The gate oxide layer of the GP1M005A050H has a very low leakage current and is also resistant to voltage surges.The GP1M005A050H is an ideal choice for applications that require low noise and high gain. It is an excellent choice for low noise RF amplifiers, switched mode power supplies, and digital-to-analog converters. It is also used in various audio and video applications such as microphone amplifiers, video amplifiers, and audio mixers.In conclusion, the GP1M005A050H is a three-terminal FET device with three active pins (gate, source, and drain). It has low input impedance and high output impedance, making it suitable for various RF, audio, and video applications. It is also reliable and has a long life span.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description