GP1M005A040PG Allicdata Electronics
Allicdata Part #:

GP1M005A040PG-ND

Manufacturer Part#:

GP1M005A040PG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 400V 3.4A IPAK
More Detail: N-Channel 400V 3.4A (Tc) 50W (Tc) Through Hole I-P...
DataSheet: GP1M005A040PG datasheetGP1M005A040PG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 522pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 1.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The GP1M005A040PG is a high-power, low-loss N-channel MOSFET for use in a variety of applications. It is capable of handling a maximum drain-to-source current of 40A and is designed to have low on-resistance and a high power dissipation ability. This makes the GP1M005A040PG suitable for high-current switch-mode power supplies, as well as being well-suited for a variety of other applications.

The GP1M005A040PG utilizes advanced silicon chip processing technologies such as a power MOSFET process and a low resistance package process. This enables the device to achieve a low on-resistance of 7 milliOhms and a maximum power dissipation of 6W. These features provide significant improvements in performance compared to traditional MOSFETs.

A MOSFET is an electrical switch made up of semiconductor materials (usually silicon). The gate region controls the current flow between the source and drain regions. The MOSFET is typically made up of three different terminals, the gate, source, and drain. The gate is used to control the current and is connected to a power source. The source and drain bidirectionally control the current between the two regions.

The GP1M005A040PG is an N-channel MOSFET, which basically means that the current runs in one direction. This makes it suitable for switch-mode power supplies as well as other applications where bi-directional current control is not necessary. The main advantage is that the current flows in one direction, allowing for better control and higher efficiency.

The GP1M005A040PG can be used in a variety of applications such as motor control, power conversion, and power management. In motor control, it can be used as a switch to turn a motor\'s power on or off. In power conversion, it can be used to regulate the voltage in a device. In power management, it can be used as a switch to regulate the current in a device.

In addition to its uses in motor control, power conversion and power management, the GP1M005A040PG MOSFET can also be used in a wide range of other applications, including automotive, consumer electronics, and industrial control. With its high power handling ability and low power loss, the GP1M005A040PG is an ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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