GP1M004A090FH

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GP1M004A090FH is a single, enhancement mode, N-channel MOSFET. This MOSFET device features a high-speed, low-on-resistance, and low-power consumption device which provides a maximum drain current (ID) of 4A, a maximum drain-source voltage (VDS) of 90V, and a maximum gate-source voltage (VGS) of ±20V. This MOSFET is widely used in many applications, ranging from high current power regulators to low power switches. Its normal function in an electronic system is to control the flow of current from the source to the drain. It does this by allowing a small current to flow through the gate, which in turn controls the much larger current flow from the source to the drain. Additionally, this MOSFET’s high-speed operation makes it popular in applications where switching speed is important, such as in pulse generators and high current power switching circuits, while its low on-resistance makes it ideal for low-power switching applications. The GP1M004A090FH is a static device, meaning that it requires a static (dc) bias voltage to operate. This bias voltage is applied to the gate of the MOSFET so that a gate-source (VGS) threshold is achieved for the device to be in an ‘on’ state. With a voltage applied, the gate attracts free electrons from the source and forms an inversion layer at the interface between the gate and the source. This inversion layer acts as a semiconductor barrier and prevents current from flowing between the source and the drain, effectively creating a ‘shutoff’ state for the MOSFET. When VGS exceeds the threshold voltage, the inversion layer collapses, allowing current to flow from the source to the drain. The current flow is controlled by the proportional amount of voltage applied. So, a greater gate bias can cause the MOSFET to open more, allowing more current to flow from the source to the drain. The typical gate-source (VGS) voltage range of this MOSFET is -20V to +20V, so the current flow can be proportionally increased or decreased by increasing or decreasing the gate bias voltage.The GP1M004A090FH MOSFET also features a low on-resistance (RDS(on)) of 0.2?. This makes it ideal for use in low power switching circuits and power regulation applications, as the amount of power lost due to conduction resistance is kept to a minimum. As the on-resistance of the MOSFET is low, the device is also suitable for high-side switching, as the current loss is kept low. This in turn reduces the amount of power dissipated, thus allowing for more efficient operation.In addition to low power switching and power regulation applications, the GP1M004A090FH MOSFET is also suitable for high current power switching applications due to its high speed operation and maximum current drain rating of 4A. This MOSFET is also commonly used in circuits requiring an isolation switch, such as DC-DC converters, pulse generator circuits, and LED circuits. In summary, the GP1M004A090FH MOSFET is a single, enhancement mode, N-channel MOSFET with a maximum drain current of 4A, a maximum drain-source voltage of 90V, and a maximum gate-source voltage of ±20V. It features a low on-resistance of 0.2? and is suitable for a wide range of applications due to its high speed operation and low power consumption. It is commonly used in high current power switching circuits, low power switching circuits, power regulation circuits, pulse generator circuits, and isolation switch circuits.

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