Allicdata Part #: | GP1M008A050PG-ND |
Manufacturer Part#: |
GP1M008A050PG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 8A IPAK |
More Detail: | N-Channel 500V 8A (Tc) 120W (Tc) Through Hole I-PA... |
DataSheet: | GP1M008A050PG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 937pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP1M008A050PG is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a transistor that uses an electric field to control the conductivity between source and drain terminals. The GP1M008A050PG is a single N-Channel MOSFET, which is ideal for uses such as motor controls, voltage regulators, lamps and sensors.
A MOSFET is a type of FET (Field Effect Transistor) that has a gate and drain terminals that are insulated from each other by a dielectric layer (usually silicon dioxide). The gate terminal acts as an electrode, which when applied with an electric signal, can control the current flow between the source and drain terminals by varying the width of the channel underneath the gate oxide. The drain and source terminals are connected by a conductive channel, typically silicon. The conductivity of the channel is determined by the gate-to-channel voltage.
The GP1M008A050PG is typically used in various applications such as load switch devices, motor controls, voltage regulators, lamp ballasts, and general-purpose switching. It has a maximum drain source voltage of 50 volts and a maximum drain current of 8 amps. It also has an on-resistance of 25 mOhms and an on-state resistance of 1.2 Ohms. The GP1M008A050PG also has a peak VGS(th) of 2.0 volts and a power dissipation of 11.25 Watts.
The MOSFET works by controlling the conductivity between its source and drain terminals. When no potential difference is applied between the gate and channel, the device behaves as an open switch and no current will flow. When a positive potential difference is applied between the gate and channel, the device will act like a closed switch and the current will flow from the source to the drain. By varying the potential difference between gate and channel, the current flow can be controlled.
The GP1M008A050PG is ideal for motor controls, voltage regulators, lamp ballasts, and other devices that need to control current flow. It is also suitable for use in switching and rectification applications. The design of the device also allows it to handle large voltages and currents, making it ideal for applications where high power is needed. It is also designed to handle high frequency switching without causing unwanted voltage or current surges.
The GP1M008A050PG is a useful and reliable device for a variety of applications. With its high power and low on-state resistance, it is ideal for applications that require both switching and current control. It is also a cost-effective device that is suitable for many applications. With its versatility, the GP1M008A050PG can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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