GP1M003A050HG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	52.1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	395pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.8 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M003A050HG application field and working principleGP1M003A050HG is an N-channel Standard Level MOSFET which is designed particularly to be used in low-power Load Switch applications. It offers superior board-space savings, very low RDS(on) and excellent ON state characteristics. This MOSFET is especially suitable for use in automotive and industrial applications in which low on-state resistance and low threshold voltage (VGS) are important.The GP1M003A050HG is a N-channel enhancement-mode MOSFET which uses a silicon-based semiconductor material. This type of MOSFET has gate oxide insulation between gate and channel and gate voltage (VGS) is applied to control the current flow through the channel. It consists of a source, drain and gate terminal. The gate terminal is connected to the transistor gate and acts as a switch for controlling the flow of current. A positive voltage applied to the gate terminal results in an increase to the conductive channel and a decrease in the resistance.In terms of application fields, GP1M003A050HG can be used in various areas due to its superior switching characteristics. It is highly suitable for use in low-power load switch applications such as automotive and industrial applications. The device can be used in a wide variety of switching topologies from single to quad switch applications. Various applications such as automotive lighting, home appliance, portable electronics, motor drives and in-vehicles systems. Furthermore, it can also be used for power management applications in a wide range of automotive applications.When it comes to working principles, GP1M003A050HG works by means of the gate voltage applied to the terminal. The gate voltage provides an electric field across the gate oxide so that the open or closed channel is formed. When the gate voltage is high enough, the electrons move into the channel and increase the current flow of the MOSFET. When the gate voltage is below the threshold voltage (VGS), then the current is blocked. This can be used to control the current flow in the MOSFET and make it suitable for various switching topologies.In addition to the basic principle, GP1M003A050HG is also engineered with features such as low on-state resistance, low threshold voltage (VGS), and fast switching. This ensures low power losses and improved performance. Furthermore, the device also offers excellent die packaging to save board space. It is a compact device with an SOT-323 package which can provide low profile and high integration for a wide range of applications.Overall, GP1M003A050HG is a high performance N-channel MOSFET which is ideal for use in low-power load switch applications. It offers low on-state resistance and low threshold voltage, fast switching speed and excellent die packaging to save board space. It has a wide range of applications in automotive and industrial systems, and is suitable for use in a variety of switching topologies.

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