Allicdata Part #: | 1560-1158-5-ND |
Manufacturer Part#: |
GP1M003A090PH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 900V 2.5A IPAK |
More Detail: | N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole I-P... |
DataSheet: | GP1M003A090PH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 748pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.1 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A General Product 1M003A090PH, or GP1M003A090PH, is an insulated gate bipolar transistor (IGBT) that is used across a wide range of applications. This transistor is mainly used in motor drives, DC-DC converters, AC motor drives and as a switching device in digital circuits. It is also used in power factor correction, adaptive current compensation and PWM control.
GP1M003A090PH is designed for low voltage, high current and high speed applications. It is a single-phase, three-terminal device with a metal-oxide semiconductor field effect transistor (MOSFET) structure. It features low conduction and switching losses, low gate current, fast switching speeds and a low forward voltage drop.
The working principle of GP1M003A090PH is based on the application of an electric field to a thin film of oxides. The electric field creates a hole-electron pair at the interface. These charges travel through the oxide layer, generating a voltage drop across the oxide layer. This voltage drop causes a change in the channel width of the MOSFET, which allows current to pass through the channel.
GP1M003A090PH is used in many applications that require high current, low voltage and high speed switching. It is commonly used in DC-DC converters, motor drives, AC motor/generator drives, power factor correction, adaptive current compensation and PWM control. In such applications, GP1M003A090PH can provide reliable and highly efficient performance.
In addition, GP1M003A090PH can also be used in high-voltage, low-power applications such as lighting systems and renewable energy converters. Its high switching speed and low on-state resistance make it a good choice for such applications.
Overall, GP1M003A090PH is a solid choice for high-voltage, low-power applications due to its low conduction and switching losses, low forward voltage drop, fast switching speed and low gate current. It can be used in a variety of applications, such as motor drives, DC-DC converters, AC motor drives, power factor correction, adaptive current compensation and PWM control.
The specific data is subject to PDF, and the above content is for reference
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