GP1M009A090N

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GP1M009A090N is an FET (Field Effect Transistor) power MOSFET, which is specifically designed for high voltage applications and has an extended drain-source voltage (VDS) range of 900V. It has a small drain-source on-state resistance (RDS(on)) which is ideal for high-current applications. There are several features provided in the design to ensure that the performance of this device is optimized for the most demanding applications.

The GP1M009A090N consists of two connection points called the gate and drain. It is built from an insulated gate field effect technology which is commonly known as an IGFET or MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is important to note that the GP1M009A090N does not have a base connection.

The GP1M009A090N device is an N-type MOSFET, which means that the device will conduct current from the drain to the source. Most MOSFETs have a threshold voltage where the device begins to conduct regardless of its gate voltage. On an N-type MOSFET, the threshold voltage triggers conduction when the drain-gate voltage (VGS) exceeds the threshold voltage (VT), and current conduction occurs until the gate voltage (VGS) is at zero volts.

The GP1M009A090N is primarily used in applications requiring good protection features and high current and voltage capabilities. It is an excellent choice for designs where devices with a low on-state resistance (RDS(on)) are needed in order to reduce power loss. Examples of such applications include power management systems, motor drivers, switching power supplies and high-reliability systems.

In terms of design, the GP1M009A090N MOSFET offers several valuable advantages. For instance, it has a gate-drain breakdown voltage of up to 1750V. This ensures that it is able to offer reliable protection against overvoltage conditions. It also has a low on-state drain-source resistance (RDS(on)) which helps to reduce power losses.

The GP1M009A090N is also designed with a maximum power dissipation of 25W and a maximum channel temperature of 150C. This ensures that the GP1M009A090N can operate reliably in high-temperature conditions.

In conclusion, the GP1M009A090N is an FET power MOSFET which is specifically designed for high voltage applications. It has a low on-state drain-source resistance (with RDS(on) of 0.009 ohms) which is ideal for high-current applications. It also offers protection features, such as a gate-drain breakdown voltage of up to 1750V and a maximum power dissipation of 25W. These features make the GP1M009A090N an ideal choice for power management systems, motor drivers, switching power supplies and high-reliability systems.

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