Allicdata Part #: | GP1M020A060N-ND |
Manufacturer Part#: |
GP1M020A060N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 20A TO3PN |
More Detail: | N-Channel 600V 20A (Tc) 347W (Tc) Through Hole TO-... |
DataSheet: | GP1M020A060N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 347W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2097pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The GP1M020A060N is a static field effect transistor (MOSFET), with a single transistor device specifically designed for various circuit applications. It is a 20V, 1A, 60mΩ power MOSFET, based on the latest trench technology. It is designed for use in high-power switching applications in a wide range of current and voltage requirements.
The GP1M020A060N is a N-Channel MOSFET, meaning it is controlled by a pin-controlled gate that can control both current and voltage as well as operate at a high speed. The main difference between a standard MOSFET and this model is it has a self-aligning gate design, making it ideal for applications where smaller gate currents are required. This model also has a higher temperature operating range, meaning it can handle a greater amount of power than a standard MOSFET.
The GP1M020A060N works by having the gate connected to a control voltage, and when this control voltage is applied, electrons are drawn from the source to the drain, which creates a conducting channel between the two. This allows current to flow from the drain to the source, thus completing the circuit. The control voltage can be used to control the current output of the transistor, by adjusting the voltage applied across the gate. As the voltage is increased, more electrons are pulled from the source to the drain, increasing the current output of the transistor.
The GP1M020A060N is used primarily in high-power switching applications, such as in motor control or switching power supplies. It is also used in various application fields such as high-frequency and low-level signal control, as well as in audio, video and communications applications. It is designed to handle high power, handle high temperatures and operate at a high speed, thus making it highly suitable for high-power switching applications.
Overall, the GP1M020A060N is an excellent transistor device for applications where high power and high speed operation is required. Its self-aligning gate design allows for low gate current operation, while its higher temperature range makes it suitable for more demanding applications. Its high-power switching capability, along with its high speed operation, make it an ideal choice for a wide variety of circuit applications.
The specific data is subject to PDF, and the above content is for reference
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