GP1M008A050CG Allicdata Electronics
Allicdata Part #:

1560-1167-2-ND

Manufacturer Part#:

GP1M008A050CG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 500V 8A DPAK
More Detail: N-Channel 500V 8A (Tc) 120W (Tc) Surface Mount D-P...
DataSheet: GP1M008A050CG datasheetGP1M008A050CG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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GP1M008A050CG is a type of metal-oxide semiconductor field-effect transistor that is commonly used in many commercial and industrial applications. The GP1M008A050CG is a single N-channel MOSFET, commonly called an enhancement-mode MOSFET. This type of transistor is more efficient than traditional-mode MOSFETs due to its ability to turn on faster and use less power. The GP1M008A050CG is a popular choice for applications that require high switching frequency, low on-resistance, and high power dissipation. Its relatively small size and low cost makes it an attractive option for many manufacturers.

The GP1M008A050CG is commonly used in switching applications that require a low on-resistance load. It is often used for driving inductive and resistive loads, such as motors, solenoids, and relays. The device is also used as an electronic switch in electronic circuits, such as voltage regulators, DC/DC converters, and amplifiers. Additionally, the small size of the GP1M008A050CG makes it a popular choice for portable and handheld devices.

The working principle of the GP1M008A050CG is relatively simple. It is a three-terminal device, composed of a source, a drain, and a gate. When voltage is applied to the gate, an electric field is created in the region between the source and the drain. This field creates a barrier between the two terminals, allowing only a limited amount of current to flow from the source to the drain.

The main advantage of the GP1M008A050CG is its low on-resistance, which is caused by the electric field created when voltage is applied to the gate. This low resistance allows for higher switching frequencies, as well as faster response time, which makes it a popular choice for many switching applications. Additionally, the device has a high power dissipation capability, which allows it to handle high power loads. As such, it is often used in applications that require high power handling capabilities.

The main disadvantages of the GP1M008A050CG are its relatively small size and cost. Its small size is a major drawback that can be an issue when dealing with certain applications, such as those with high power loads. Additionally, the cost of the device may be too high for some users. However, its small size and low cost make it a popular choice for many commercial and industrial applications.

The GP1M008A050CG is a popular choice for many commercial and industrial applications, due to its low on-resistance, fast switching speeds, and relatively low cost. Its small size and high power dissipation make it an attractive option for many manufacturers. It is often used as an electronic switch in many circuits, such as voltage regulators, DC/DC converters, and amplifiers. Additionally, the device is also used to drive inductive and resistive loads, such as motors, solenoids, and relays.

The specific data is subject to PDF, and the above content is for reference

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