Allicdata Part #: | 1560-1180-5-ND |
Manufacturer Part#: |
GP1M012A060H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 12A TO220 |
More Detail: | N-Channel 600V 12A (Tc) 231W (Tc) Through Hole TO-... |
DataSheet: | GP1M012A060H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 231W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2308pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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GP1M012A060H is an advanced level MOSFET from Panasonic that is mainly used for personal, industrial and commercial applications. It offers excellent performance in power management applications and is suitable for any application from automotive to home appliances.
A MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a voltage-controlled transistor which uses the gate voltage for controlling its conductance. When the gate voltage is equal to or greater than the threshold voltage, the channel between the source and drain opens, resulting in a large current flow between the source and drain. The gate-source voltage (Vg) is the key to its operation and can be used to manipulate the current flow.
GP1M012A060H has a maximum drain current of 60 A and a drain-source voltage rating of 900 V. Its maximum gate-source voltage (Vgs) is +/- 20 V and the junction-gate voltage (Vjg) is +12 V. It features a reverse body diode, allowing for efficient current flow, and an avalanche-proof dynamic diodes, ensuring optimal operation. It also has a high switching speed, enabling it to operate at high frequencies up to 25 MHz.
GP1M012A060H is widely used in low-voltage and low-power applications, such as relays and solenoid valves, inverters, motor drives and AC/DC converters. It is also suitable for use in more power sensitive applications such as consumer electronics, power supplies and other high-frequency applications. It is widely used in automotive and solar applications, due to its high efficiency and low power consumption.
The principle of operation for the GP1M012A060H MOSFET is the same as that of a standard MOSFET, with the gate-source voltage determining the current flow between the source and drain. When the gate-source voltage (Vgs) is equal to or greater than the threshold voltage, the channel between the source and drain opens, allowing current flow between them. The current flow is then controlled by the amount of gate voltage and drain current applied.
In summary, the GP1M012A060H MOSFET provides excellent performance in power management applications and is suitable for any application from automotive to home appliances. It is capable of handling large amounts of current and has high switching speeds, making it ideal for high-frequency applications. Additionally, the reverse body diode and avalanche-proof dynamic diode provide excellent protection and current flow capabilities, making the GP1M012A060H an ideal choice for low-power and low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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