Allicdata Part #: | 1560-1176-5-ND |
Manufacturer Part#: |
GP1M010A080FH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 800V 9.5A TO220F |
More Detail: | N-Channel 800V 9.5A (Tc) 48W (Tc) Through Hole TO-... |
DataSheet: | GP1M010A080FH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2336pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 4.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The GP1M010A080FH is a surface mounted Fast Recovery Diode (FRD), designed for use in a wide variety of applications. The device is a dual layer Schottky (Schottky) Barrier Diodes (SBD), which combines a P- and an N-Channel, creating a single efficient structure for fast switching. The GP1M010A080FH offers a wide range of features including fast switch-off times, low leakage current and large current handling capacities.
The GP1M010A080FH is used primarily in automotive and automotive-related applications, such as engine control, starter systems and ignition control. In addition, it can be used in a variety of other applications including industrial, communication and monitoring systems. In each of these roles, the GP1M010A080FH can provide the fast switching times, enhanced efficiency and stability enabled by its Schottky Barrier capabilities.
The main difference between the GP1M010A080FH and other SBDs is its advanced fabrication process. By eliminating inefficient steps, GP1M010A080FH can operate at temperatures as low as -55oC, with a maximum reverse leakage current of 0.6 μA. Furthermore, its low switching time of 4 ns, combined with its low forward voltage drop of 0.7 V, makes it ideal for applications that require fast operation. The device also has a maximum operating temperature of +175oC and a maximum working voltage of 80V.
In terms of working principles, the GP1M010A080FH can be triggered by either a positive or a negative edge on the channel, allowing for rapid switching between its two main states, on and off. It works by generating a junction field-effect which is controlled by an applied voltage across the two terminals. The effect that this creates is to vary its resistance in a controlled manner, reducing the current flow in conducting channels and vice versa. This enables the device to regulate current flow in the form of a direct current (DC) or a pulse-width-modulated (PWM) signal.
The most important feature of the GP1M010A080FH is its versatility across a range of applications, a factor which allows designers to optimise their designs for their specific applications. It is also an efficient device, as its low forward voltage drop ensures efficient transfer of power throughout the system. In addition, the GP1M010A080FH offers excellent performance and reliability, making it a popular choice for applications where power scalability and longevity are required.
Overall, the GP1M010A080FH is a highly efficient and reliable surface-mounted fast recovery diode. It has a wide range of capabilities and is ideally suited for applications such as automotive and industrial control, communication, and monitoring systems. Its features, including fast switch-off times, low leakage current, large current handling capacity and efficient operation enable designers to create high performance and reliable designs. Furthermore, its advanced fabrication process allows it to operate at low temperatures and provides excellent reliability, making it the ideal choice for applications where both power and performance are critical.
The specific data is subject to PDF, and the above content is for reference
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