Allicdata Part #: | 1560-1192-5-ND |
Manufacturer Part#: |
GP1M023A050N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 23A TO3PN |
More Detail: | N-Channel 500V 23A (Tc) 347W (Tc) Through Hole TO-... |
DataSheet: | GP1M023A050N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 347W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3391pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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GP1M023A050N is a type of single P-Channel Junction Gate Field Effect Transistor (JFET) which is used in different applications.
This sot-89 type FET consists of an N-type semiconductor substrate, with source and drain regions on either side. A gate region is also present which is separated from the substrate and the source/drain regions by a thin insulating layer.
The JFET works mainly by controlling the voltage applied to the gate region to create an electrical field around the channel and in turn altering the conductivity of the channel. This allows the JFET to be used as a switch or amplifier.
The GP1M023A050N is an ideal choice for many power applications due to its low gate threshold voltage, low input capacitance and low leakage current. These features combine to allow the device to be capable of switching higher current than other FETs.
Also, due to its P-type conduction, it is highly immune to switching noise in high frequency applications and is also not sensitive to static electricity. It can easily handle up to +50V and – 5V and is protected against over current conditions.
The GP1M023A050N can be used in a variety of applications due to its flexible characteristics. For example, it is often used to control low current circuits such as switching devices like relays and solenoids, as well as for audio amplifiers and digital signals.
It is also often used as a replacement for bipolar transistors in application due to its lower power consumption. It can handle up to 1A and has excellent linearity.
Due to its low voltage and current requirements, the GP1M023A050N is also often seen in portable device and battery-powered applications where it can provide long life and low power consumption.
In addition, the device is also suitable for use in signal processing and data transmission applications, where it can provide reliable switching and signal integrity. The low vibrations levels and high reliability of the P-Channel FET also make it a suitable choice for automotive applications such as engine control.
In conclusion, the GP1M023A050N is well suited for many applications which require a reliable, low power and high quality FET. It has low input capacitance, low on-state resistance and excellent noise immunity, making it a great choice for portable applications and higher frequency applications.
The specific data is subject to PDF, and the above content is for reference
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