GP2M010A065F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GP2M010A065F is a single high-side 100V NMOSFET from Toshiba. It has the capability to operate in both the linear and switching regions, depending on the application.

The GP2M010A065F is well-suited for use in DC/DC converters, motor and solenoid drivers, and power management circuits in power supply systems, as well as in power switching, switching power supply, and various other applications.

The GP2M010A065F offers high power efficiency and switching speeds, with a fast and reliable overload protection. It has a low on-resistance (RdsOn) of 1.3 ohms and is capable of switching up to a maximum of 65A.

The working principle of the GP2M010A065F is based on its field effect transistor (FET) structure. A FET has three terminals: gate, drain and source. When an input voltage is applied to the gate terminal, the electric field created by this voltage attracts a channel of electrons between the drain and source terminals. This creates an electron flow, known as a "channel" between the two terminals, and the FET is said to be ON.

When the gate voltage is removed, the electric field is dissipated and the electrons are no longer attracted between the drain and source terminals. The FET is now OFF, making it an ideal switch for a variety of applications.

The GP2M010A065F is part of Toshiba\'s GP range of power FETs. Its superior quality and high performance make it an ideal choice for applications demanding superior reliability. With its advanced design and high-performance, the GP2M010A065F is becoming increasingly popular in various power management and switching applications.

The specific data is subject to PDF, and the above content is for reference