GP2M004A060PG

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The GP2M004A060PG is a surface mount level N-Channel enhancement mode MOSFET designed for high-performance automotive applications. This device provides very low RDS(ON) and gate charge Qg, which makes it ideal for high current applications, and it features a Trench Process technology. The GP2M004A060PG device is capable of withstanding greater than 18V drain-source voltage at junction temperatures of up to 150°C. This device is ideal for use in various application fields, including load switches, DC-DC converters, motor and lamp control, and other automotive applications.

Working principle

The GP2M004A060PG device consists of three terminals; the gate, the source, and the drain. The MOSFET utilizes a field effect transistor structure, which allows it to achieve low On-Resistance and low gate charge. When a voltage is applied to the gate terminal, a gate-source voltage builds up, leading to a field effect in the channel of the transistor. This field effect causes the channel to increase in conductivity, allowing higher currents to flow from the source to the drain terminal. The MOSFET is an enhancement mode device, meaning that the device is normally turned off and needs an external voltage at the gate terminal for operation.

The GP2M004A060PG device has a number of features that make it ideal for automotive applications. The Trench Process technology enhances the breakdown voltage of the channel, allowing for greater than 18V drain-source voltage. The device also has fast switching time, low gate charge Qg, and low RDS(ON). These features allow the MOSFET to dissipate low power while providing high current driving capability. This makes it ideal for motor and lamp control, load switching, and DC-DC converters.

Conclusion

The GP2M004A060PG device is an extremely powerful device that is perfect for high current applications such as load switching, motor and lamp control, and DC-DC converters. The device is capable of withstanding a drain-source voltage of greater than 18V, and has low RDS(ON) and gate charge Qg, allowing the device to dissipate less power while providing high current driving capability. This makes it ideal for use in automotive applications.

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