| Allicdata Part #: | GP2M020A050F-ND |
| Manufacturer Part#: |
GP2M020A050F |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Global Power Technologies Group |
| Short Description: | MOSFET N-CH 500V 18A TO220F |
| More Detail: | N-Channel 500V 18A (Tc) 48W (Tc) Through Hole TO-2... |
| DataSheet: |  GP2M020A050F Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2880pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The GP2M020A050F is a power MOSFET with high-speed switching and low on-resistance. It is an N-channel MOSFET manufactured with a high-rareframe ultra-low resistance trench-field effect process. This process is designed to provide good switching performance, low on-resistance (RDS(on)), and small package size. The GP2M020A050F is a Field-Effect Transistor (FET) with a single gate. In addition to the high performance MOS transistor, a variety of resistance, capacitor and protection circuit elements are available for almost any application.The GP2M020A050F offers the best possible linear performance for a power MOSFET. Its switching speed is especially high with a short turn-on and turn-off delay. The on-resistance (RDS(on)), is also very low; this makes it an ideal choice for applications which require high performance, such as, high-speed switching, low power dissipation, and low voltage operation. Additionally, this FET can also be used in various applications such as, motor control, power supplies, load switches, and DC/DC converters. The working principle of the GP2M020A050F is slightly different from that of a p-channel MOSFET. In this FET, the gate is connected to the drain and is used to control the flow of current through the drain and source. When a voltage is applied to the gate, it creates an electric field which attracts electrons from the source. The electric field also increases the gate-source voltage and in turn increases current flow. This process is called inversion and is responsible for controlling the flow of current between the source and drain. The primary benefit of the GP2M020A050F is its versatility. It can be used to control a variety of different loads, such as motors and LED currents. It can also be used for buffering, solenoids, and relay switches. This MOSFET is also very efficient and can provide a low power dissipation, ideal for portable applications and high-temperature applications. In conclusion, the GP2M020A050F is an ideal choice for high-performance applications and provides a low on-resistance and high-speed switching. It is also versatile, allowing it to be used in a variety of different applications. Due to its efficient power dissipation, it can also be used in high-temperature applications.The specific data is subject to PDF, and the above content is for reference
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