Allicdata Part #: | GP2M023A050N-ND |
Manufacturer Part#: |
GP2M023A050N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 23A TO3PN |
More Detail: | N-Channel 500V 23A (Tc) 347W (Tc) Through Hole TO-... |
DataSheet: | GP2M023A050N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 347W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3270pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The GP2M023A050N is a general-purpose single-channel P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), designed as a power switching device for operation at up to 75V. It is rated for an on-state resistance of 50 mOhms at 10V and ambient temperature, and 25 mOhms at 4.5V and ambient temperature.
MOSFETs are voltage-controlled devices, unlike bipolar transistors, which are current-controlled. In a MOSFET, the channel is created by an electric field between the substrate and the gate, instead of by a current. The gate also provides insulation between the source and drain pins, making it a good choice for applications requiring high speed switching and high impedance.
The GP2M023A050N is ideally suited for medium to high power switching applications such as lighting, motor control, automotive, and aerospace. It can also be used in high speed circuits due to its low capacitance. The device is designed to be able to drive a wide range of loads, including resistive, inductive, capacitive, and motor loads.
The GP2M023A050N is typically used in applications requiring high frequency, low voltage switching. It offers low power dissipation, making it suitable for situations where power conservation is essential. The device is available with a P-channel drain-source resistance of up to 150 mOhms and is capable of operating at gate voltages of up to 10 V.
The GP2M023A050N is a versatile device due to its high input impedance and low output capacitance. It is also known for its high dielectric breakdown voltage, making it suitable for use in applications which require a higher voltage rating. The device has no threshold voltage, making it suitable for applications which require either linear or switching modes of operation. It is also capable of providing a high frequency switching, which is beneficial in applications where speed is critical.
The GP2M023A050N is simple to connect and use in power switching applications. The drain, source, and gate pins can all be connected to the circuit, with the gate voltage being adjusted according to the desired signal. The power rating of the device is 1.88A and it can switch up to 75V. The device has a thermal resistance of 1.3 K/W and is rated for an ambient temperature of up to 105°C.
The GP2M023A050N is designed to provide reliable performance in a wide variety of power switching applications. Its high input impedance and low output capacitance make it ideal for applications which require fast switching or a higher voltage rating. Its high dielectric breakdown voltage, low power dissipation, and wide operating range provide excellent reliability and performance. The GP2M023A050N is an ideal choice for any application requiring a high speed and/or high-voltage switching device.
The specific data is subject to PDF, and the above content is for reference
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