HUFA76629D3ST

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HUFA76629D3ST is an N-Channel Enhancement Mode, High Voltage Fast Acting MOSFET datasheet. It is made up of silicon materials and has a high maximum frequency. The HUFA76629D3ST has dual drain and drain-source breakdown voltage of about 19 volts. It is designed to work as a switch-off device for DC/DC applications.

The HUFA76629D3ST is an enhancement mode MOSFET with a high-surface doping. This device is specifically designed to operate in high-voltage and fast-switching applications. The device offers a high input impedance and fast switching time, meeting the requirements of various applications which require the ability to switch on and off quickly.

The HUFA76629D3ST is suitable for use as an amplifier, switch, or as a transistor current sink. It typically requires a few volts of gate-source voltage to operate and can draw a maximum current of 3.2A per channel. The device also has a low ON-resistance of 1.28 ohms and fast rise and fall times, making it ideal for applications such as DC/DC converters.

The HUFA76629D3ST is designed for use in a variety of applications. It can be used in high-voltage switching, DC/DC converters, portable devices and consumer electronics. It can also be used in consumer audio applications and in automotive applications. In addition, the device is suitable for use in audio amplifiers, high-voltage DC circuit breakers and high-speed switching.

The working principle of the HUFA76629D3ST is based on the principle of electric current flow. When a voltage is applied to the Gate terminal, a voltage drop is produced between the Source and Drain terminals. This voltage drop creates a current flow between the Source and Drain, which can be used to control the current flow in the circuit.

The HUFA76629D3ST is an ideal device for many applications. It is suitable for use in a wide range of applications, from portable devices to power management, providing efficient and reliable operation. The device offers low ON-resistance, fast switching time and a high input impedance.

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