Allicdata Part #: | HUFA76645S3ST-ND |
Manufacturer Part#: |
HUFA76645S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 75A D2PAK |
More Detail: | N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²... |
DataSheet: | HUFA76645S3ST Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 153nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 310W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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HUFA76645S3ST is a type of MOSFET (Metal oxide semiconductor field-effect transistor). It is a type of transistor used in high-voltage switching applications. The HUFA76645S3ST has an output capability of up to 800 volts, making it suitable for applications requiring high voltage switching. The device is constructed using metal oxide, which is utilized to reduce the Gate Oxide Leakage, providing more protection against parasitic elements.
Application Field
The HUFA76645S3ST can be used in a wide range of switching applications, including power supply and motor control. The device can be used to switch large amounts of power, making it suitable for applications that require high voltage and/or are unable to handle high current loads. Additionally, the HUFA76645S3ST is often used for audio applications, including amplifiers and audio recording.
Working Principle
The HUFA76645S3ST utilizes an insulated gate, which is used to create a voltage field across an area. This voltage field varies in response to changes in the voltage applied to the gate, allowing the MOSFET to act as an electrically switched device. As the voltage applied to the gate is increased, the voltage field expands, allowing electric current to flow between the source and drain. As the voltage is decreased, the voltage field decreases and the current is blocked, thus allowing the HUFA76645S3ST to function as an electronic switch.
The HUFA76645S3ST has an exceptionally low input gate drive voltage, which is utilized to reduce on-resistance and provide efficient operation of the device. This is an important factor in high voltage switching applications, as it helps minimize power losses, and allows the device to operate efficiently and with precision control.
Conclusion
The HUFA76645S3ST is an ideal device for applications requiring high voltage switching. The device has a low input gate drive voltage, which is used to reduce on-resistance and ensure efficient operation. Additionally, the HUFA76645S3ST has a variety of application fields, making it suitable for a wide range of applications from power supplies to audio recordings. This makes the HUFA76645S3ST an excellent choice for high voltage switching in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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