| Allicdata Part #: | IRF830STRLPBFTR-ND |
| Manufacturer Part#: |
IRF830STRLPBF |
| Price: | $ 0.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 4.5A D2PAK |
| More Detail: | N-Channel 500V 4.5A (Tc) 74W (Tc) Surface Mount D2... |
| DataSheet: |  IRF830STRLPBF Datasheet/PDF |
| Quantity: | 2400 |
| 800 +: | $ 0.88029 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 610pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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IRF830STRLPBF is a type of semiconductor device. Triggered by electric, it connects and disconnects the dual side simultaneously, to realize low level trigger and large current output, with high switching speed and low on-resistor, making it suitable for extensive industrial, commercial and consumer applications.A field effect transistor, commonly called a FET, operates as an electronic switch by varying the voltage on its gate to either allow current to pass from the source to the drain, or to prevent current from passing. IRF830STRLPBF is a type of FETS (Field Effect Transistors), categorized as single FETs, wherein the source and drains of the FET are connected to a single point, resulting in low power consumption, low reactance and high switching speed. The IRF830STRLPBF FET\'s working principle is a basic two-terminal semiconductor device that acts as a semiconductor switch and is typically used to control low-power signals. It has a gate, a source, and a drain, and an internal channel between the source and drain which can be controlled by the gate. The FET acts as an electronic switch, in which the current between the source and the drain is controlled by a voltage on the gate. When the FET\'s gate is left open or unconnected, it is off, no current is passed between the drain and source, and the voltage is the same on either side of the FET. When a voltage is applied to the gate, the current begins to flow through the FET, and a higher current is available between the two terminals.The FETs are widely used in radio, audio and power amplification, as they can be designed with low on resistance as well as providing low power consumption and low reactance. In applications such as radio layout or surface mount power amplifiers, FETs provides fast switching speed, low gate noise and low RDS on characteristics. IRF830STRLPBF FETs are also used for more purpose-specific applications, such as in sensors, telecom, display and consumer electronics. In these types of applications, FETs help to provide high output power, low on-resistance, fast switching speed and low gate noise, as well as providing superior temperature stability and power efficiency.FETs are also widely used in high frequency switching applications, such as controlling power mosfet inverters, photovoltaic panels and power semiconductor converters. This is due to the fact that FETs offer high frequency operation, high switching speed, low on-resistance, and low power consumption. IRF830STRLPBF FETs are particularly well suited for such applications as they offer an outstanding combination of performance, power efficiency, and ruggedness. Overall, IRF830STRLPBFFETs are an excellent choice for a variety of industrial, commercial, and consumer applications. They offer reliable and efficient operation, while providing superior output power and low on-resistance. In addition, they provide fast switching speed, low gate noise, and superior temperature stability. With all these features, the IRF830STRLPBF FETs presents an ideal solution for a wide range of applications, from power amplifiers to high frequency switching.
The specific data is subject to PDF, and the above content is for reference
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