IRF8788PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF8788PBF is a 280mΩ, 55V LOGIC level N-channel Field-Effect Transistor, specifically designed for high voltage Direct-Current (DC) switching applications. This device integrates very small size Gates, ESD Protection and high performance HEXFET technology, breaking the barrier of high power switching. Due to its high performance, low Gate charge, high voltage capability and small footprint, the IRF8788PBF is suitable for applications requiring low power, high voltage and high-frequency operation.

The IRF8788PBF is a single N-channel device, which is sourced from the Drain pin, and is controlled with respect to the Source by means of the Gate. It is also known as an N-type MOSFET, short for Metal Oxide Field-Effect Transistor, a type of Power MOSFET. It uses a gate-oxide layer of aluminium oxide, above which a thin gate electrode is placed. The gate is insulated from the rest of the transistor, which is an efficient way to control a current drain.

In terms of operation, the IRF8788PBF functions as a switch. When the Gate voltage is below the threshold voltage, the drain-source current is low and the device behaves as an open switch. When the Gate voltage is adjusted and exceeds the threshold voltage, the transistor switches to the on-state and allows current to flow from the Drain to the Source. In this state, the device behaves like a closed switch. The easy to drive low threshold voltage of this particular device makes it especially attractive and maximizes the switching performance.

Being a 55V MOSFET, the IRF8788PBF is an excellent choice for radio frequency applications that require high voltage and low power. This device can easily switch high voltage circuits, providing smooth operation and unparalleled reliability. Additionally, the device boasts a very low on-state resistance (RDS(on)) of 280mΩ and low total gate charge (Qg) making it suited for efficient DC/DC converter applications and for switching various power loads.

The IRF8788PBF is also suitable for audio and video switching applications, as it provides very low signal distortion and offers outstanding linearity. In a nutshell, this device is capable of handling a wide range of applications, including high-voltage motor control, DC motor drives, robotics, power supplies, IGBT gate drivers and more.

In conclusion, the IRF8788PBF is a single N-channel MOSFET with a very low on-state resistance, low gate charge and low threshold voltage. With its high voltage capability, high performance and low power consumption, it is an excellent choice for a variety of switching applications requiring high voltages and high-frequencies, such as radio-frequency applications, audio and video switching and motor control.

The specific data is subject to PDF, and the above content is for reference