| Allicdata Part #: | IRFH5210TRPBFTR-ND |
| Manufacturer Part#: |
IRFH5210TRPBF |
| Price: | $ 0.38 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 10A 8-PQFNN-Channel 100V 10A (Ta)... |
| More Detail: | N/A |
| DataSheet: | IRFH5210TRPBF Datasheet/PDF |
| Quantity: | 11707 |
| 1 +: | $ 0.38400 |
| 10 +: | $ 0.37248 |
| 100 +: | $ 0.36480 |
| 1000 +: | $ 0.35712 |
| 10000 +: | $ 0.34560 |
| Series: | HEXFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 14.9 mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2570pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 3.6W (Ta), 104W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PQFN (5x6) |
| Package / Case: | 8-PowerVDFN |
| Base Part Number: | -- |
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The IRFH5210TRPBF is an N-channel, 10-V, 0.045-Ω MOSFET (metal oxide semiconductor field-effect transistor). It is a member of the IRF5200 product family and is designed for use in low-voltage applications. This device features low on-resistance and low gate-source threshold voltage and is capable of withstanding high-current, high-temperature operation. This makes the IRFH5210TRPBF well-suited for use in a variety of applications, including power conversion circuits, inverters, DC-DC converters, motor control circuits, and telecommunications systems.
The IRFH5210TRPBF is an N-channel MOSFET, which means it is composed of a metal oxide layer sandwiched between the source and drain. The gate terminal is used to control the flow of current through the device. When a voltage is applied to the gate terminal, the metal oxide layer creates an electric field that modulates the conductivity of the device. This allows the IRFH5210TRPBF to be used as a switch or amplifier in electronic circuits.
The IRFH5210TRPBF has a wide range of applications. In power conversion circuits, the device can be used to switch or modulate the current flow in order to regulate the power output of the system. In inverters, the device can be used to switch the current flow between AC and DC. In DC-DC converters, the device can be used to control the output voltage of the system. In motor control circuits, the device can be used to rapidly switch the current flow, allowing for precise control of motor speeds and torque. The device can also be used in telecommunications systems to switch or modulate the flow of current in order to create signals for communication over long distances.
The IRFH5210TRPBF is well-suited for use in a variety of applications due to its low on-resistance, its low gate-source threshold voltage, and its ability to withstand high-current, high-temperature operation. The device's low on-resistance allows it to be used in power conversion circuits, as it can reduce power losses due to its low conduction resistance. The device's low gate-source threshold voltage means it can be operated at low voltages, making it suitable for use in battery-operated applications. Finally, the device's ability to withstand high-temperature operation makes it ideal for use in high-power applications, such as motor control circuits.
The IRFH5210TRPBF is a versatile and reliable device that is suitable for a wide range of applications. Its low on-resistance, low gate-source threshold voltage, and ability to withstand high-temperature operation make it an excellent choice for use in power conversion circuits, inverters, DC-DC converters, motor control circuits, and telecommunications systems.
The specific data is subject to PDF, and the above content is for reference
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IRFH5210TRPBF Datasheet/PDF