IRFH5250DTRPBF Allicdata Electronics
Allicdata Part #:

IRFH5250DTRPBFTR-ND

Manufacturer Part#:

IRFH5250DTRPBF

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 40A 8VQFN
More Detail: N-Channel 25V 40A (Ta), 100A (Tc) 3.6W (Ta), 156W ...
DataSheet: IRFH5250DTRPBF datasheetIRFH5250DTRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.45600
10 +: $ 0.44232
100 +: $ 0.43320
1000 +: $ 0.42408
10000 +: $ 0.41040
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PQFN (5x6) Single Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6115pF @ 13V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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An IRFH5250DTRPBF is a n-channel depletion-mode power MOSFET developed by International Rectifier Corporation. The device is a logic-level MOSFET that employs the latest planar high cell density process. It has low input capacitance and fast switching time.

The IRFH5250DTRPBF is characterized by very low on-state resistance, fast switching speed, low gate noice and high avalanche capability. It provides a high current flow capability, low zero gate threshold voltage, and a wide operating temperature range. It is designed for high-frequency, high voltage and high-power pulse applications, such as automotive systems, power conversion electronic equipment, intelligent and industrial motor control circuits.

The device consists of multi-gate of MOSFETs connected in parallel so that a single device can handle high currents. When a voltage is applied to the gate, a current will flow from the source to the drain, allowing the device to act as a source-controlled resistor. This gives the device the ability to switch rapidly between high and low states, making it ideal for applications such as DC-DC converters, digital logic circuits and power switch circuits.

The working principle of the IRFH5250DTRPBF is based on the physics of capacitive coupling between the gate oxide layer and the channel region beneath it. When a voltage is applied to the gate, the amount of charge stored in the gate oxide layer will increase, allowing current to be conducted between the source and the drain. This action causes the channel resistance to decrease, enabling current to flow through the device.

The IRFH5250DTRPBF is built to withstand a wide range of harsh industrial applications; it has a high temperature range (up to 150°C) and is highly reliable for automotive applications. Its extreme switching speeds makes it particularly suitable for high frequency operations, making it ideal for power converters, power switch circuits and intelligent motor control circuits. Its small size allows the device to fit in high-density package designs; this makes it very suitable for higher power applications. The device is a very reliable device for applications requiring long-term reliability.

The IRFH5250DTRPBF is a great choice for applications that require efficient, fast switching, strong high-voltage capabilities and high reliability as it combines all of these features into one package. It is perfect for a range of high frequency, high voltage and high-power pulse applications like automotive systems, power conversion equipment and intelligent and industrial motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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