Allicdata Part #: | IRFH7882TRPBFTR-ND |
Manufacturer Part#: |
IRFH7882TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 26A |
More Detail: | N-Channel 80V 26A (Ta) 4W (Ta), 195W (Tc) 8-PQFN ... |
DataSheet: | IRFH7882TRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.6V @ 250µA |
Package / Case: | 8-VQFN |
Supplier Device Package: | 8-PQFN (5x6) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 195W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3186pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | FASTIRFET™ |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRFH7882TRPBF is a MOSFET transistor that is used in the circuits from Integrated Device Technology (IDT). This device is often seen as either a MOSFET or a FET and determines how well or how efficiently your device performs. It is suitable for power supply applications, such as for consumer electronics and telecommunications industries.
IRFH7882TRPBF\'s application field mainly include consumer appliances, power electronics, switching power supplies, solar panel converters, DC-DC converters, UPS and computers.Its discrete transistors are used as voltage amplifiers, power transistors and switching mechanisms.
IRFH7882TRPBF\'s working principle is the same as with any other MOSFET transistor. It consists of a source, drain and gate electrodes to control the flow of current between the source and drain. The source is connected to the negative terminal of the power supply and the drain is connected to the positive terminal. The gate electrode serves as a switch to turn the transistor on or off, controlling the flow of current. When the gate is switched on, the MOSFET draws in electrons from the source and sends them to the drain, allowing current to flow through the device. When the gate is switched off, current is blocked from flowing between the source and the drain.
Due to its physical construction and the position of its gate electrode, the IRFH7882TRPBF has superior performance compared to other types of transistors. It handles high current operation with a higher breakdown voltage and has a low turn-on voltage drop. This reduced voltage drop minimizes power losses, ensuring that devices made with the IRFH7882TRPBF transistor consume less power.
The IRFH7882TRPBF transistor is also a self-protection device, as it can detect over-current conditions and shut itself off, to prevent electrical fires or power surges. It also offers improved EMI performance, which is important in consumer electronic applications.
The characteristics of the IRFH7882TRPBF make it ideal for use in power supplies and consumer electronic devices, providing superior performance and safety. With its superior characteristics and properties, the IRFH7882TRPBF is the perfect choice for designers looking to build efficient and reliable devices.
The specific data is subject to PDF, and the above content is for reference
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