IRFHM830DTR2PBF

Vgs(th) (Max) @ Id:	2.35V @ 50µA
Package / Case:	8-VQFN Exposed Pad
Supplier Device Package:	PQFN (3x3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 37W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1797pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	4.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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The IRFHM830DTR2PBF is a discrete metal-oxide semiconductor field-effect transistor (MOSFET) produced by International Rectifier, a company that specializes in semiconductor technologies for industrial, military, aerospace, and consumer applications. A single, discrete MOSFET is an active electronic component (usually consisting of just one transistor) that can be used to amplify or switch signals. The IRFHM830DTR2PBF is a high-speed, low-cost MOSFET with high current and voltage ratings, making it suitable for a wide range of applications.The IRFHM830DTR2PBF is a single N-channel MOSFET designed for use in a wide variety of electronic circuits. It is rated for use in applications with up to 30 volts DC, and can handle currents of up to 8 amps. The MOSFET can also be used in a variety of frequency control circuits, and offers excellent switching performance up to 1MHz. The device has a breakdown voltage of 35 volts and a threshold voltage of 0.5 volts.The IRFHM830DTR2PBF is designed to be an effective electronic switch for power management and signal switching applications. It can be used to switch DC voltage and current, allowing circuit designers to control the amount of power delivered to a device or circuit. By adjusting the voltage level on the gate of the transistor, the current flow can be increased or decreased. This makes it possible to control various aspects of a circuit, such as the level of brightness of a display or the speed of a motor.In addition to its use as an electronic switch, the IRFHM830DTR2PBF can also be used as an amplifier in many applications. A single MOSFET can be used to amplify a weak signal in order to make it stronger and clearer. This can be extremely useful in radio communication, where weak signals need to be amplified in order to be heard clearly.The IRFHM830DTR2PBF MOSFET is designed to be heat resistant and reliable, making it well suited for use in a variety of industrial and consumer applications. It is well suited for use in a variety of electronic circuits, ranging from audio amplifiers to motor control circuits. Its high current and voltage ratings, excellent breakdown voltage and frequency response, and reliable switching performance make the IRFHM830DTR2PBF an effective and versatile component for a wide range of applications.

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