IRFHS8342TR2PBF

Vgs(th) (Max) @ Id:	2.35V @ 25µA
Package / Case:	6-PowerVDFN
Supplier Device Package:	6-PQFN (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.7nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	16 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.8A (Ta), 19A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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IRFHS8342TR2PBF is a vertical Fet power MOSFET which is built using an advanced Metal Oxide Semiconductor Field Effect Transistor (MOSFET) process that is especially suitable for high-voltage applications. It has excellent switching performance, low on-resistance, ESD protection and low leakage current under reverse blocking conditions. IRFHS8342TR2PBF combines excellent performance with a very low thermal resistance.The IRFHS8342TR2PBF has a low on-resistance of 4.42 mΩ and a maximum gate-source voltage of 18 V. It is designed to operate at a maximum rating of 350 V and a maximum operating temperature of 175 ºC. Additionally, it features an enhanced breakdown voltage and low gate charge with 6 V of gate-source charge, making it suitable for applications where low gate-source voltage is important.The IRFHS8342TR2PBF has high maximum drain-source voltage, high channel conductance, low total gate charge, and low thermal resistance. It has an optimized structure for its specific application, with N-channel and P-channel enhancings for drive control, low ON times, increased switching efficiency, fast body diode recovery and improved immunity in high operating temperature and high frequency switching applications.The working principle of the IRFHS8342TR2PBF power MOSFET is based on voltage switching. When the source-gate voltage (VGS) is raised to a certain threshold, the current flowing through the MOSFET increases significantly. This voltage application is often referred to as the turn-on voltage or threshold voltage. On the other hand, when the VGS is reduced to a specified negative level, the current through the MOSFET reduces and the device is said to be turned off.The most common application field of the IRFHS8342TR2PBF is in power switching applications such as: DC-DC converters, motor control, power management and lighting applications. It is especially suitable for use in applications which require high-speed switching, low on-resistance, high peak voltages and low body diode recovery time.In addition, the device is used in a wide range of other applications, such as: audio amplifiers, high-power audio systems, professional audio equipment, television power supplies and high-definition television systems. The device is also used in medical and military applications, where its high efficiency and reliability are key.In conclusion, the IRFHS8342TR2PBF is an advanced vertical Fet power MOSFET which combines excellent performance with a very low thermal resistance. It is ideal for applications which require high-speed switching, low on-resistance and high peak voltages. It is also suitable for a wide range of other applications, ranging from audio amplifiers to medical and military applications.

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