IRFHS9351TRPBF Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFHS9351TRPBF is an Array type of Field Effect Transistor or FET. This FET is part of the Insulated-Gate Bipolar Transistor (IGBT) family and it is a plated-through hole version made by the Infineon Technologies Group. This FET has a nominal gain of 24o, a high voltage withstand up to 230V and a breakdown voltage of 40V and a very high speed performance. It can be used in a variety of applications, and its main working principle is to allow direct control of high current and high voltage applications.

The IRFHS9351TRPBF is a rugged FET ideal for a variety of applications, such as motor control, power applications, uninterruptible power supply (UPS) systems, motor control, application switching and high voltage power supplies. The FET can withstand a high voltage of up to 230V and has a very low on-state resistance, which makes it ideal for high frequency switching applications. It also offers a very fast switching speed, with an exceptionally high speed of up to 150A/µs, making it suitable for high frequency switching at high frequencies. This FET is also very robust in terms of thermal stability, making it ideal for use at high temperatures.

The main working principle of the IRFHS9351TRPBF is based on two modes of operation. The first is known as the source-drain mode, where the voltage applied to the source electrode will cause an electric field that pulls electrons from the source and out of the channel. This results in a current flowing from the source to the drain. The second mode of operation is the gate-source mode, where the voltage applied to the gate electrode will cause an electric field that will attract electrons from the source and out of the channel. This creates a potential between the source and the drain, which causes a current to flow in the channel.

In addition to its high voltage withstand and high speed of operation, the IRFHS9351TRPBF is also characterized by its very low on-state resistance, making it ideal for applications requiring very low losses. The low on-state resistance also makes it ideal for high-frequency switching, as the voltage drop across it is relatively small. This means that it can be used in a variety of switching applications, such as motor control and power applications.

The IRFHS9351TRPBF is ideal for high current and high voltage applications, as its high voltage withstand, high speed performance, and very low on-state resistance make it extremely suitable for these types of applications. The FET can be used in a variety of applications, such as motor control, power applications, and UPS systems. In terms of its working principle, this FET is based on two modes of operation; source-drain and gate-source, and offers a very high speed of operation and a very low on-state resistance, making it ideal for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference