IRFIB5N50LPBF Allicdata Electronics
Allicdata Part #:

IRFIB5N50LPBF-ND

Manufacturer Part#:

IRFIB5N50LPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 4.7A TO220FP
More Detail: N-Channel 500V 4.7A (Tc) 42W (Tc) Through Hole TO-...
DataSheet: IRFIB5N50LPBF datasheetIRFIB5N50LPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFIB5N50LPBF is a single N-Channel Power MOSFET. With a maximum drain current rating of 90 amps and a maximum drain-source voltage rating of 500 volts, this MOSFET makes a suitable choice for high-current switching and power conversion applications. It has a low gate to source capacitance (17.4 pf) and fast turn-on and off speeds for efficient and reliable switching. This MOSFET is often used in AC/DC converters, motor drives, and load switches.

A MOSFET is a type of transistor that uses an insulated gate to control the flow of current through a channel between the source and drain. A voltage applied to the gate controls the flow of current through the channel between the drain and source. The IRFIB5N50LPBF is an N-Channel MOSFET, which means that current flows from the drain to the source when a positive voltage is applied to the gate. The width of the channel is determined by the voltage applied to the gate, and can be adjusted to regulate the current flow through the channel.

The IRFIB5N50LPBF is a long-channel power MOSFET, which means it has a larger channel width than standard MOSFETs. This allows it to dissipate more power, making it suitable for higher-current applications. It also has a low gate-source capacitance, which means that it can be quickly turned on and off, making it suitable for high-frequency switching applications. The low capacitance also reduces power consumption and helps reduce EMI (electromagnetic interference).

The IRFIB5N50LPBF has a number of advantages over other power MOSFETs. It has a low RDS(on) resistance, which means that it consumes less power and provides higher efficiency in applications where the operating current is relatively low. It also has a low gate-source capacitance, which helps reduce EMI. Additionally, the higher breakdown voltage of 500 volts reduces the risk of accidental short circuits.

In summary, the IRFIB5N50LPBF is a single N-Channel Power MOSFET with a maximum drain current rating of 90 amps and a maximum drain-source voltage rating of 500 volts. It is suitable for high-current switching and power conversion applications, and is often used in AC/DC converters, motor drives, and load switches. It has a low RDS(on) resistance, low gate-source capacitance, and fast turn-on and off speeds, making it suitable for high-frequency switching applications. The higher breakdown voltage of 500 volts also reduces the risk of accidental short circuits.

The specific data is subject to PDF, and the above content is for reference

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