IRFIZ44G Allicdata Electronics
Allicdata Part #:

IRFIZ44G-ND

Manufacturer Part#:

IRFIZ44G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 30A TO220FP
More Detail: N-Channel 60V 30A (Tc) 48W (Tc) Through Hole TO-22...
DataSheet: IRFIZ44G datasheetIRFIZ44G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ44G is a popular N-Channel enhancement-mode MOSFET and is widely used in a variety of applications due to its small size, low gate charge, and high drain-source Voltage rating. This makes it a great general-purpose transistor for switching and amplifying applications. In this article, we will discuss the application field and working principle of the IRFZ44G transistor.

Application Field

The IRFZ44G is a great choice for various switching and amplification applications, including motor and lighting control, switching power supplies, relays, and so on. It is also commonly used in DC-to-DC converters and LED lighting circuits due to its low input capacitance and high-Safe Operating Area (SOA). Furthermore, the low on-resistance of the IRFZ44G makes it well-suited for general-purpose switching and amplifying applications.

Working Principle

The IRFZ44G transistor is based on an N-Channel MOSFET principle. It consists of an N-type MOSFET which is placed between the source and drain electrodes in an insulated-gate field-effect transistor. When a positive potential is applied to the gate, the electrons in the channel are attracted towards it. This creates a conductive path between the source and the drain electrodes, thereby allowing a current to flow. The current flow can be varied by changing the potential applied to the gate.

The IRFZ44G also has a low gate charge, which further enhances its performance. This is because when the gate charge is low, it allows the gate to be charged more quickly, resulting in reduced turn-on time. Furthermore, since the gate charge is so low, it also enables the transistor to turn on and off quickly, making it ideal for high-switching applications.

The IRFZ44G also has a high drain-source Voltage rating, which makes it suitable for applications with voltage higher than 30V. This is because the MOSFETs with high voltage rating can handle higher voltage without causing any damage. In addition, the low input capacitance makes it well-suited for applications where only a small voltage drop is required, such as LED lighting circuits.

The IRFZ44G is also capable of being used as a linear amplifier, which further enhances its applications. This is because the MOSFET has a high linearity, allowing it to amplify signals accurately. It also features a low noise figure, which makes it ideal for low-noise applications.

In summary, the IRFZ44G is a great choice for a variety of switching and amplification applications due to its small size, low gate charge, high drain-source Voltage rating, and low input capacitance. Furthermore, its linearity and low noise characteristics make it suitable for linear amplifying purposes as well. All these features make the IRFZ44G an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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