
Allicdata Part #: | IRFI610G-ND |
Manufacturer Part#: |
IRFI610G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 2.6A TO220FP |
More Detail: | N-Channel 200V 2.6A (Ta) Through Hole TO-220-3 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Description
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The IRFI610G is a high-performance, high-voltage insulated gate bipolar transistor (IGBT) designed for use in a wide range of applications. It is a high-voltage MOSFET (metal oxide semiconductor field-effect transistor) that uses voltage to control the flow of electric current. This device is widely used in power electronics applications such as motor control, power conversion, and lighting.The IRFI610G is a single-N-channel MOSFET, which means it is optimized for switching applications such as motor speed control, power control, and lighting. It is built on the same technology as the IGBT (insulated gate bipolar transistor), but it has a unique feature of voltage-controlled current conduction.The working principle of the IRFI610G is based on the physical feature of the N-Channel MOSFET. At the gate section, a metal oxide layer is placed between the gate terminal and the substrate. When a voltage is applied to the gate terminal, the oxide layer becomes conductive, thus allowing a flow of electric current through the device. The amount of current that flows through the device can be controlled by the voltage applied to the gate terminal.The IRFI610G has a maximum drain-to-source breakdown voltage (BVds) rating of 500V and a maximum gate source voltage (Vgs) rating of 30V. This makes it suitable for applications where high voltages are needed. It also has a maximum drain current rating of 16A. This allows it to be used in a wide range of power applications, such as motor control and power conversion.In addition, the IRFI610G has a rugged on-resistance (Rds(on)) rating of 0.04 ohm, which makes it suitable for applications where high reliability is required. It also has a fast switching speed, allowing it to be used in applications where high speed is needed.The IRFI610G is also immune to electro-static discharge (ESD) and has a temperature operating range of -55°C to 150°C. This makes it a suitable choice for harsh environmental conditions.Overall, the IRFI610G is an ideal choice for power electronic applications such as motor control, power conversion, and lighting. It has a high breakdown voltage and a low on-resistance rating, which makes it suitable for a wide range of applications. It also has a fast switching speed and high temperature range, making it suitable for harsh environmental conditions.The specific data is subject to PDF, and the above content is for reference
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